Conductance quantization control and neuromorphic properties in Pt-nanoparticle incorporated HfAlOx alloy memristor

Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems

(2020) Chandreswar Mahata et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Investigation of the Thermal Recovery From Reset Breakdown of a SiN x -Based RRAM

(2020) Kyungho Hong et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays

(2020) Eduardo Pérez et al.   Electronics

Modified resistive switching performance by increasing Al concentration in HfO2 on transparent indium tin oxide electrode

(2020) Chandreswar Mahata et al.   CERAMICS INTERNATIONAL

Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

(2020) Stefan Petzold et al.   Advanced Electronic Materials

Recent Advances of Quantum Conductance in Memristors

(2019) Wuhong Xue et al.   Advanced Electronic Materials

Low–temperature fabrication of HfAlO alloy dielectric using atomic–layer deposition and its application in a low–power device

(2019) Pengfei Ma et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Controllable and Stable Quantized Conductance States in a Pt/HfO x /ITO Memristor

(2019) Wuhong Xue et al.   Advanced Electronic Materials

Mimicking Biological Synaptic Functionality with an Indium Phosphide Synaptic Device on Silicon for Scalable Neuromorphic Computing

(2018) Debarghya Sarkar et al.   ACS Nano

Adaptive Crystallite Kinetics in Homogenous Bilayer Oxide Memristor for Emulating Diverse Synaptic Plasticity

(2018) Jun Yin et al.   ADVANCED FUNCTIONAL MATERIALS

Conductance Quantization in Nonvolatile Resistive Switching Memory Based on the Polymer Composite of Zinc Oxide Nanoparticles

(2018) Yanmei Sun et al.   Journal of Physical Chemistry C

Conduction mechanisms, dynamics and stability in ReRAMs

(2018) Chen Wang et al.   MICROELECTRONIC ENGINEERING

Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry

(2018) Xuguang Luo et al.   Crystals

Ultra-Low Power Multilevel Switching with Enhanced Uniformity in Forming Free TiO2−x -Based RRAM with Embedded Pt Nanocrystals

(2017) Menelaos Tsigkourakos et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition

(2017) Jolien Dendooven et al.   Nature Communications

Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation

(2017) Cong Ye et al.   RSC Advances

Quantum conductance and magnetic properties in ZnO based resistive switching memory

(2016) Shuxia Ren et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors

(2016) Wei Yi et al.   Nature Communications

Artificial Synaptic Devices Based on Natural Chicken Albumen Coupled Electric-Double-Layer Transistors

(2016) Guodong Wu et al.   Scientific Reports

Experimental verification of the Boltzmann relation at the wall in inductively coupled plasmas

(2015) Young-Cheol Kim et al.   APPLIED PHYSICS LETTERS

Effect of Al doping on the retention behavior of HfO2 resistive switching memories

(2015) Jacopo Frascaroli et al.   MICROELECTRONIC ENGINEERING

Conductance Quantization in Resistive Random Access Memory

(2015) Yang Li et al.   Nanoscale Research Letters

Conductance Quantization in Resistive Random Access Memory

(2015) Yang Li et al.   Nanoscale Research Letters

Resistive switching phenomena: A review of statistical physics approaches

(2015) Jae Sung Lee et al.   Applied Physics Reviews

Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories

(2014) S. Gao et al.   APPLIED PHYSICS LETTERS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Voltage sweep modulated conductance quantization in oxide nanocomposites

(2014) Adnan Younis et al.   Journal of Materials Chemistry C

Conductance quantization in oxygen-anion-migration-based resistive switching memory devices

(2013) C. Chen et al.   APPLIED PHYSICS LETTERS

Well controlled multiple resistive switching states in the Al local doped HfO2 resistive random access memory device

(2013) Y. S. Chen et al.   JOURNAL OF APPLIED PHYSICS

3-D solar cells by electrochemical-deposited Se layer as extremely-thin absorber and hole conducting layer on nanocrystalline TiO2 electrode

(2013) Duy-Cuong Nguyen et al.   Nanoscale Research Letters

Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

(2012) Xiaojian Zhu et al.   ADVANCED MATERIALS

Emerging memories: resistive switching mechanisms and current status

(2012) Doo Seok Jeong et al.   REPORTS ON PROGRESS IN PHYSICS

Metal oxide resistive memory switching mechanism based on conductive filament properties

(2011) G. Bersuker et al.   JOURNAL OF APPLIED PHYSICS

Memory materials: a unifying description

(2011) Massimiliano Di Ventra et al.   Materials Today

Physical and Memory Characteristics of Atomic-Layer-Deposited High-κ Hafnium–Aluminum-Oxide Nanocrystal Capacitors with Iridium-Oxide Metal Gate

(2009) Atanu Das et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today