Effect of capping layer on the ferroelectricity of hafnium oxide

P‐Type Ferroelectric Field Effect Transistor Using Ultrathin Hafnium Aluminium Oxide

(2020) Chun-Hu Cheng et al.   Physica Status Solidi-Rapid Research Letters

Investigation of Gate-Stress Engineering in Negative Capacitance FETs Using Ferroelectric Hafnium Aluminum Oxides

(2019) Chun-Hu Cheng et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor

(2018) Chun-Hu Cheng et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Energy-Efficient Versatile Memories With Ferroelectric Negative Capacitance by Gate-Strain Enhancement

(2017) Yu-Chien Chiu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants

(2017) M. H. Park et al.   Journal of Materials Chemistry C

Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers

(2016) Yu Jin Kim et al.   NANO LETTERS

Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition

(2016) K. D. Kim et al.   Journal of Materials Chemistry C

Effect of zirconium or titanium component on electrical properties of PbZr1−xTixO3gated negative capacitance ferroelectric field-effect transistors

(2016) Y G Xiao et al.   Materials Research Express

Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

(2014) Chun-Hu Cheng et al.   IEEE ELECTRON DEVICE LETTERS

Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High-$\kappa$ Gate Dielectric

(2014) Chun Hu Cheng et al.   IEEE ELECTRON DEVICE LETTERS