Synaptic potentiation and depression in Al:HfO2-based memristor

标题
Synaptic potentiation and depression in Al:HfO2-based memristor
作者
关键词
HfO, 2, Resistive switching, Artificial synapse, Synaptic plasticity, Memristive device
出版物
MICROELECTRONIC ENGINEERING
Volume 147, Issue -, Pages 41-44
出版商
Elsevier BV
发表日期
2015-04-12
DOI
10.1016/j.mee.2015.04.052

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