Reliable resistive switching of epitaxial single crystalline cubic Y-HfO2 RRAMs with Si as bottom electrodes
出版年份 2020 全文链接
标题
Reliable resistive switching of epitaxial single crystalline cubic Y-HfO2 RRAMs with Si as bottom electrodes
作者
关键词
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出版物
NANOTECHNOLOGY
Volume 31, Issue 20, Pages 205203
出版商
IOP Publishing
发表日期
2020-02-05
DOI
10.1088/1361-6528/ab72b6
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