Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode
出版年份 2021 全文链接
标题
Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode
作者
关键词
Memristor, Electrochemical metallization, Hafnium oxide, Highly doped silicon, Atmospheric and vacuum environment
出版物
Materials Science and Engineering B-Advanced Functional Solid-State Materials
Volume 271, Issue -, Pages 115267
出版商
Elsevier BV
发表日期
2021-06-06
DOI
10.1016/j.mseb.2021.115267
参考文献
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