Improved Synaptic Device Properties of HfAlOx Dielectric on Highly Doped Silicon Substrate by Partial Reset Process

Gradually Tunable Conductance in TiO2/Al2O3 Bilayer Resistors for Synaptic Device

(2021) Hojeong Ryu et al.   Metals

Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode

(2021) Hojeong Ryu et al.   Metals

Multi-Level Switching of Al-Doped HfO2 RRAM with a Single Voltage Amplitude Set Pulse

(2021) Jinfu Lin et al.   Electronics

Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications

(2020) Firman Mangasa Simanjuntak et al.   NANOTECHNOLOGY

Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays

(2020) Eduardo Pérez et al.   Electronics

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

(2020) Zongjie Shen et al.   Nanomaterials

Pseudo-Interface Switching of a Two-Terminal TaOx/HfO2 Synaptic Device for Neuromorphic Applications

(2020) Hojeong Ryu et al.   Nanomaterials

Challenges and Applications of Emerging Nonvolatile Memory Devices

(2020) Writam Banerjee   Electronics

Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array

(2020) Tae-Hyeon Kim et al.   APPLIED PHYSICS LETTERS

Modified resistive switching performance by increasing Al concentration in HfO2 on transparent indium tin oxide electrode

(2020) Chandreswar Mahata et al.   CERAMICS INTERNATIONAL

Voltage Amplitude-Controlled Synaptic Plasticity from Complementary Resistive Switching in Alloying HfOx with AlOx-Based RRAM

(2020) Hojeong Ryu et al.   Metals

Short-Term Memory Dynamics of TiN/Ti/TiO2/SiOx/Si Resistive Random Access Memory

(2020) Hyojong Cho et al.   Nanomaterials

Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack

(2020) Hojeong Ryu et al.   Nanomaterials

Neuromorphic Computing Using Emerging Synaptic Devices: A Retrospective Summary and an Outlook

(2020) Jaeyoung Park   Electronics

A New Read Scheme for Alleviating Cell-to-Cell Interference in Scaled-Down 3D NAND Flash Memory

(2020) Jae-Min Sim et al.   Electronics

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

(2020) Emanuel Carlos et al.   ADVANCED MATERIALS

Bio-inspired synaptic functions from a transparent zinc-tin-oxide-based memristor for neuromorphic engineering

(2020) Ji-Ho Ryu et al.   APPLIED SURFACE SCIENCE

Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition

(2019) Md. Mamunur Rahman et al.   Micromachines

Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays

(2019) Min‐Ci Wu et al.   Advanced Science

Multilayer Metal‐Oxide Memristive Device with Stabilized Resistive Switching

(2019) Alexey Mikhaylov et al.   Advanced Materials Technologies

Recommended Methods to Study Resistive Switching Devices

(2018) Mario Lanza et al.   Advanced Electronic Materials

Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell

(2018) Firman Mangasa Simanjuntak et al.   Nanoscale Research Letters

Comparative study of Al2 O3 , HfO2 , and HfAlO x for improved self-compliance bipolar resistive switching

(2017) Andrey S. Sokolov et al.   JOURNAL OF THE AMERICAN CERAMIC SOCIETY

Memory selector devices and crossbar array design: a modeling-based assessment

(2017) An Chen   Journal of Computational Electronics

Cryomilling: An environment friendly approach of preparation large quantity ultra refined pure aluminium nanoparticles

(2017) Nirmal Kumar et al.   Journal of Materials Research and Technology-JMR&T

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Analysis of weakly bonded oxygen in HfO2/SiO2/Si stacks by using HRBS and ARXPS

(2009) Ta-Chang Tien et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Direct observation of conducting filaments on resistive switching of NiO thin films

(2008) J. Y. Son et al.   APPLIED PHYSICS LETTERS