Improved Ferroelectricity and Endurance of Hf 0.5 Zr 0.5 O 2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf 0.5 Zr 0.5 O 2 Films

(2021) Terence Mittmann et al.   Physica Status Solidi-Rapid Research Letters

Enhanced Ferroelectric Properties in Hf 0.5 Zr 0.5 O 2 Films Using a HfO 0.61 N 0.72 Interfacial Layer

(2021) Beom Yong Kim et al.   Advanced Electronic Materials

Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 °C) Annealing Process

(2021) Venkateswarlu Gaddam et al.   IEEE ELECTRON DEVICE LETTERS

Low-Temperature Dopant-Assisted Crystallization of HfO2 Thin Films

(2021) Theodosia Gougousi   CRYSTAL GROWTH & DESIGN

Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors

(2020) Vekateswarlu Gaddam et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation

(2020) David Lehninger et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Enhanced ferroelectric properties and insulator-metal transition-induced shift of polarization-voltage hysteresis loop in VOx-capped Hf0.5Zr0.5O2 thin films

(2020) Yan Zhang et al.   ACS Applied Materials & Interfaces

Crystalline Phase-Controlled High-Quality Hafnia Ferroelectric With RuO₂ Electrode

(2020) Youngin Goh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides

(2019) Tun-Jen Chang et al.   VACUUM

Ferroelectric properties of gradient doped Y2O3:HfO2 thin films grown by pulsed laser deposition

(2019) Qianqian Shao et al.   APPLIED PHYSICS LETTERS

Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode

(2019) Rongrong Cao et al.   IEEE ELECTRON DEVICE LETTERS

Excellent Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Induced by Al2O3 Dielectric Layer

(2019) Jiali Wang et al.   IEEE ELECTRON DEVICE LETTERS

Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

(2018) Anna G. Chernikova et al.   ACS Applied Materials & Interfaces

Influence of oxygen vacancies in ALD HfO 2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO 2-x /Pt structure

(2018) Andrey Sergeevich Sokolov et al.   APPLIED SURFACE SCIENCE

Impact of Plasma Treatment on Reliability Performance for HfZrOx-Based Metal-Ferroelectric-Metal Capacitors

(2018) Kuen-Yi Chen et al.   IEEE ELECTRON DEVICE LETTERS

Low temperature thin films for next-generation microelectronics (invited)

(2018) Jurriaan Schmitz   SURFACE & COATINGS TECHNOLOGY

High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

(2018) T. Ali et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process-Structure-Property Relations

(2016) Jon F. Ihlefeld et al.   JOURNAL OF THE AMERICAN CERAMIC SOCIETY

Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition

(2016) K. D. Kim et al.   Journal of Materials Chemistry C

Mixed Al and Si doping in ferroelectric HfO2 thin films

(2015) Patrick D. Lomenzo et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in undoped hafnium oxide

(2015) Patrick Polakowski et al.   APPLIED PHYSICS LETTERS

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

(2014) Uwe Schroeder et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2films on TiN bottom and TiN or RuO2top electrodes

(2014) Min Hyuk Park et al.   Physica Status Solidi-Rapid Research Letters

From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices

(2013) Stefan Mueller et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications

(2012) Stefan Mueller et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Ferroelectricity in Gd-Doped HfO2Thin Films

(2012) S. Mueller et al.   ECS Journal of Solid State Science and Technology

Phase transitions in ferroelectric silicon doped hafnium oxide

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Growth and Interface Evolution of HfO[sub 2] Films on GaAs(100) Surfaces

(2010) Theodosia Gougousi et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY