Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 °C) Annealing Process

标题
Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 °C) Annealing Process
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 6, Pages 812-815
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2021-04-23
DOI
10.1109/led.2021.3075082

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