Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production

Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p–n diodes on a free-standing GaN substrates

(2019) Shigeyoshi Usami et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

5.0 kV breakdown-voltage vertical GaN p–n junction diodes

(2018) Hiroshi Ohta et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Gallium nitride vertical power devices on foreign substrates: a review and outlook

(2018) Yuhao Zhang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

X-ray characterization technique for the assessment of surface damage in GaN wafers

(2018) Edward Letts et al.   JOURNAL OF CRYSTAL GROWTH

1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy

(2017) Zongyang Hu et al.   IEEE ELECTRON DEVICE LETTERS

Current Status and Future Prospects of Ammonothermal Bulk GaN Growth

(2017)   SENSORS AND MATERIALS

Ammonothermal Bulk GaN Growth and Its Processing

(2017)   SENSORS AND MATERIALS

1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

(2016) Kazuki Nomoto et al.   IEEE ELECTRON DEVICE LETTERS

Curvature and bow of bulk GaN substrates

(2016) Humberto M. Foronda et al.   JOURNAL OF APPLIED PHYSICS

Reduction of crack density in ammonothermal bulk GaN growth

(2016) Edward Letts et al.   JOURNAL OF CRYSTAL GROWTH

Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation

(2015) Christophe A. Hurni et al.   APPLIED PHYSICS LETTERS

Vertical Power p-n Diodes Based on Bulk GaN

(2015) Isik C. Kizilyalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals

(2015) S. Pimputkar et al.   JOURNAL OF CRYSTAL GROWTH

Let There Be Light-With Gallium Nitride: The 2014 Nobel Prize in Physics

(2014) Paul Von Dollen et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Development of GaN wafers via the ammonothermal method

(2014) Edward Letts et al.   JOURNAL OF CRYSTAL GROWTH

High Voltage Vertical GaN p-n Diodes With Avalanche Capability

(2013) Isik C. Kizilyalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p–n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

(2013) Yoshitomo Hatakeyama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Excellent crystallinity of truly bulk ammonothermal GaN

(2008) R. Dwiliński et al.   JOURNAL OF CRYSTAL GROWTH