期刊
APPLIED PHYSICS LETTERS
卷 99, 期 25, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3668104
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资金
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1127731] Funding Source: National Science Foundation
The reverse leakage current of a GaInN light-emitting diode (LED) is analyzed by temperature dependent current-voltage measurements. At low temperature, the leakage current is attributed to variable-range-hopping conduction. At high temperature, the leakage current is explained by a thermally assisted multi-step tunneling model. The thermal activation energies (95-162 meV), extracted from the Arrhenius plot in the high-temperature range, indicate a thermally activated tunneling process. Additional room temperature capacitance-voltage measurements are performed to obtain information on the depletion width and doping concentration of the LED.(C) 2011 American Institute of Physics.[doi: 10.1063/1.3668104]
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