Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1−xO2/ZrO2 bilayer by atomic layer deposition

Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

(2020) W. Hamouda et al.   JOURNAL OF APPLIED PHYSICS

Phase-Exchange-Driven Wake-Up and Fatigue in Ferroelectric Hafnium Zirconium Oxide Films

(2020) Shelby S. Fields et al.   ACS Applied Materials & Interfaces

Depletion induced depolarization field in Hf1−xZrxO2 metal-ferroelectric-semiconductor capacitors on germanium

(2020) C. Zacharaki et al.   APPLIED PHYSICS LETTERS

Ferroelectric phase formation for undoped ZrO2 thin films by wet O2 annealing

(2020) Shigehisa Shibayama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Enhanced ferroelectricity in ultrathin films grown directly on silicon

(2020) Suraj S. Cheema et al.   NATURE

Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors

(2020) Kasidit Toprasertpong et al.   APPLIED PHYSICS LETTERS

Guidelines for Ferroelectric FET Reliability Optimization: Charge Matching

(2020) Shan Deng et al.   IEEE ELECTRON DEVICE LETTERS

Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 With High Data Retention and Read Endurance for 1T Memory Applications

(2019) K.-T. Chen et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition

(2019) Takashi Onaya et al.   MICROELECTRONIC ENGINEERING

The effects of annealing and wake-up cycling on the ferroelectricity of zirconium hafnium oxide ultrathin films prepared by remote plasma atomic layer deposition

(2019) Tzu-Yao Hsu et al.   Smart Materials and Structures

Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers

(2019) Takashi Onaya et al.   APL Materials

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

(2018) Si Joon Kim et al.   APPLIED PHYSICS LETTERS

Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics

(2018) Shinji Migita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Improved leakage current properties of ZrO 2 /(Ta/Nb)O x -Al 2 O 3 /ZrO 2 nanolaminate insulating stacks for dynamic random access memory capacitors

(2018) Takashi Onaya et al.   THIN SOLID FILMS

Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors

(2018) Si Joon Kim et al.   APPLIED PHYSICS LETTERS

Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films

(2018) Damir R. Islamov et al.   ACTA MATERIALIA

Modeling ferroelectric film properties and size effects from tetragonal interlayer in Hf1–xZrxO2 grains

(2017) Christopher Künneth et al.   JOURNAL OF APPLIED PHYSICS

Kinetic pathway of the ferroelectric phase formation in doped HfO2 films

(2017) Lun Xu et al.   JOURNAL OF APPLIED PHYSICS

Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors

(2017) Tomomi Sawada et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

(2016) S. Starschich et al.   APPLIED PHYSICS LETTERS

Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

(2016) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films

(2016) Everett D. Grimley et al.   Advanced Electronic Materials

Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors

(2015) Toshihide Nabatame et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

High-K materials and metal gates for CMOS applications

(2015) John Robertson et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films

(2015) A. Chernikova et al.   MICROELECTRONIC ENGINEERING

Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes

(2014) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer

(2014) Han Joon Kim et al.   APPLIED PHYSICS LETTERS

Antiferroelectricity in thin-filmZrO2from first principles

(2014) Sebastian E. Reyes-Lillo et al.   PHYSICAL REVIEW B

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

(2011) J. Müller et al.   APPLIED PHYSICS LETTERS