Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al x Ga1−x )2O3/β-Ga2O3 heterostructure channels

Prospects for n-type doping of (AlxGa1−x)2O3 alloys

(2020) Joel B. Varley et al.   APPLIED PHYSICS LETTERS

Probing charge transport and background doping in MOCVD grown (010) β‐Ga 2 O 3

(2020) Zixuan Feng et al.   Physica Status Solidi-Rapid Research Letters

Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage

(2020) Shivam Sharma et al.   IEEE ELECTRON DEVICE LETTERS

High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer

(2020) Nidhin Kurian Kalarickal et al.   JOURNAL OF APPLIED PHYSICS

Low temperature homoepitaxy of (010) β-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window

(2020) Arkka Bhattacharyya et al.   APPLIED PHYSICS LETTERS

MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1–x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates

(2020) A F M Anhar Uddin Bhuiyan et al.   CRYSTAL GROWTH & DESIGN

Low field transport calculation of 2-dimensional electron gas in β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3 heterostructures

(2020) Avinash Kumar et al.   JOURNAL OF APPLIED PHYSICS

Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors

(2020) Nidhin Kurian Kalarickal et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties

(2019) Zixuan Feng et al.   APPLIED PHYSICS LETTERS

$\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

(2019) Zhanbo Xia et al.   IEEE ELECTRON DEVICE LETTERS

MOCVD epitaxy of β-(AlxGa1−x)2O3 thin films on (010) Ga2O3 substrates and N-type doping

(2019) A F M Anhar Uddin Bhuiyan et al.   APPLIED PHYSICS LETTERS

Breakdown Characteristics of $\beta$ -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors

(2019) Chandan Joishi et al.   IEEE ELECTRON DEVICE LETTERS

Si-doped β-(Al0.26Ga0.74)2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy

(2019) Praneeth Ranga et al.   Applied Physics Express

Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors

(2018) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Structural and electronic properties of Ga2O3-Al2O3 alloys

(2018) Hartwin Peelaers et al.   APPLIED PHYSICS LETTERS

Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

(2018) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates

(2018) Subrina Rafique et al.   APPLIED PHYSICS LETTERS

Effects of fluorine incorporation into β-Ga2O3

(2018) Jiangcheng Yang et al.   JOURNAL OF APPLIED PHYSICS

Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties

(2018) Ken Goto et al.   THIN SOLID FILMS

Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

(2018) S. J. Pearton et al.   JOURNAL OF APPLIED PHYSICS

Composition determination of β-(AlxGa1−x)2O3layers coherently grown on (010) β-Ga2O3substrates by high-resolution X-ray diffraction

(2016) Yuichi Oshima et al.   Applied Physics Express

Intrinsic electron mobility limits inβ-Ga2O3

(2016) Nan Ma et al.   APPLIED PHYSICS LETTERS

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

(2016) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS