期刊
CRYSTAL GROWTH & DESIGN
卷 20, 期 10, 页码 6722-6730出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.cgd.0c00864
关键词
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资金
- Air Force Office of Scientific Research [FA9550-18-1-0479]
- National Science Foundation [1810041, 2019753]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [2019753] Funding Source: National Science Foundation
Single beta-phase (100) (AlxGa1-x)(2)O-3 thin films were successfully grown on (100) oriented beta-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By systematically tuning the precursor molar flow rates and growth conditions including chamber pressure, growth temperature and group VI/III molar ratio, pure beta-phase (100) (AlxGa1-x)(2)O-3 films with up to 52% of Al compositions were achieved. Comprehensive material characterization via X-ray diffraction (XRD) and highresolution scanning transmission electron microscopy (HR-STEM) revealed high quality epitaxial growth of (100) beta-(AlxGa1-x)(2)O-3 films on (100) native substrates. High resolution X-ray spectroscopy (XPS) was used for determining the AlGaO bandgaps and the Al compositions. Two-dimensional defects in the beta-(AlxGa1-x)(2)O-3 films were investigated utilizing atomic resolution STEM imaging. Additionally, film characterization via HR-STEM imaging, XRD, and energy-dispersive X-ray spectroscopy (STEM-EDS) revealed coherent growth of high quality (100) beta-(AlxGa1-x)(2)O-3/Ga2O3 superlattice (SL) structures (x = 50%) with abrupt interfaces and relatively uniform Al distribution. Step flow growth of (100) beta-(AlxGa1-x)(2)O-3 with smooth and featureless surface morphology was observed in AlGaO samples with high-Al compositions. A mechanism for the stepflow growth of high-Al content beta-(AlxGa1-x)(2)O-3 film is proposed by considering Al adatoms as preferred incorporation sites for AlGaO nucleation and growth.
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