Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors
出版年份 2018 全文链接
标题
Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 112, Issue 23, Pages 233503
出版商
AIP Publishing
发表日期
2018-06-07
DOI
10.1063/1.5037095
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes
- (2018) Chandan Joishi et al. Applied Physics Express
- Iron and intrinsic deep level states in Ga2O3
- (2018) M. E. Ingebrigtsen et al. APPLIED PHYSICS LETTERS
- Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures
- (2018) Yuewei Zhang et al. APPLIED PHYSICS LETTERS
- Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts
- (2018) Zhanbo Xia et al. IEEE ELECTRON DEVICE LETTERS
- High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm
- (2017) Hong Zhou et al. IEEE ELECTRON DEVICE LETTERS
- $\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation
- (2017) Andrew Joseph Green et al. IEEE ELECTRON DEVICE LETTERS
- Electron mobility in monoclinic β-Ga2O3—Effect of plasmon-phonon coupling, anisotropy, and confinement
- (2017) Krishnendu Ghosh et al. JOURNAL OF MATERIALS RESEARCH
- Fundamental limits on the electron mobility ofβ-Ga2O3
- (2017) Youngho Kang et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Schottky barrier height of Ni toβ-(AlxGa1−x)2O3with different compositions grown by plasma-assisted molecular beam epitaxy
- (2017) Elaheh Ahmadi et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Temperature-Dependent Characteristics of Ni/Au and Pt/Au Schottky Diodes on β-Ga2O3
- (2017) Shihyun Ahn et al. ECS Journal of Solid State Science and Technology
- Composition determination of β-(AlxGa1−x)2O3layers coherently grown on (010) β-Ga2O3substrates by high-resolution X-ray diffraction
- (2016) Yuichi Oshima et al. Applied Physics Express
- Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
- (2016) Kelson D. Chabak et al. APPLIED PHYSICS LETTERS
- Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V
- (2016) Man Hoi Wong et al. IEEE ELECTRON DEVICE LETTERS
- 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs
- (2016) Andrew J. Green et al. IEEE ELECTRON DEVICE LETTERS
- Electron channel mobility in silicon-doped Ga2O3MOSFETs with a resistive buffer layer
- (2016) Man Hoi Wong et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact
- (2015) Toshiyuki Oishi et al. Applied Physics Express
- Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy
- (2014) Hironori Okumura et al. Applied Physics Express
- High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
- (2014) Wan Sik Hwang et al. APPLIED PHYSICS LETTERS
- Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
- (2013) Masataka Higashiwaki et al. APPLIED PHYSICS LETTERS
- Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals
- (2013) T. Onuma et al. APPLIED PHYSICS LETTERS
- Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
- (2012) Kohei Sasaki et al. Applied Physics Express
- Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
- (2012) Masataka Higashiwaki et al. APPLIED PHYSICS LETTERS
- Czochralski growth and characterization of β-Ga2O3 single crystals
- (2010) Z. Galazka et al. CRYSTAL RESEARCH AND TECHNOLOGY
- Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping
- (2008) Encarnación G. Víllora et al. APPLIED PHYSICS LETTERS
- Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method
- (2008) Hideo Aida et al. JAPANESE JOURNAL OF APPLIED PHYSICS
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