期刊
IEEE ELECTRON DEVICE LETTERS
卷 40, 期 7, 页码 1052-1055出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2920366
关键词
Ga2O3 MESFET; high frequency; RF device; MBE; wide bandgap
资金
- Department of the Defense, Defense Threat Reduction Agency [HDTRA11710034]
- NSF [ECCS-1809682]
- U.S. Department of Defense (DOD) [HDTRA11710034] Funding Source: U.S. Department of Defense (DOD)
As an ultra-wide bandgap semiconductor, beta-Ga2O3 has attracted great attention for high-power, high-voltage, and optoelectronic applications. However, until now, high-frequency performance of gallium oxide devices has been limited to relatively low current gain cutoff frequencies below 5 GHz. Here, we show that highly localized delta-doping designs can enable high-sheet-charge density to enable devices with short gate lengths that allow high-frequency operation. Field-effect transistors with a gate length of 120 nm on such delta-doped beta-Ga2O3 are reported here with extrinsic unity current gain frequency of 27 GHz. The device has a peak drain current of 260 mA/mm, transconductance (gm) of 44 mS/mm, and three-terminal off-state breakdown voltage of 150 V. These results demonstrate that the potential of beta-Ga2O3 for future RF and millimeter-wave device applications.
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