Low field transport calculation of 2-dimensional electron gas in β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3 heterostructures

High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer

(2020) Nidhin Kurian Kalarickal et al.   JOURNAL OF APPLIED PHYSICS

Evaluation of Low-Temperature Saturation Velocity in $\beta$ -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors

(2019) Yuewei Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Longitudinal phonon plasmon mode coupling in β-Ga2O3

(2019) Mathias Schubert et al.   APPLIED PHYSICS LETTERS

$\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

(2019) Zhanbo Xia et al.   IEEE ELECTRON DEVICE LETTERS

Structural, band and electrical characterization of β-(Al0.19Ga0.81)2O3 films grown by molecular beam epitaxy on Sn doped β-Ga2O3 substrate

(2019) Abhishek Vaidya et al.   JOURNAL OF APPLIED PHYSICS

Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

(2018) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Guest Editorial: The dawn of gallium oxide microelectronics

(2018) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Comparison of alloy disorder scatterings in Ga- and N-polar AlGaN/GaN heterostructures

(2018) He Kang et al.   INTERNATIONAL JOURNAL OF MODERN PHYSICS B

1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs

(2018) Ke Zeng et al.   IEEE ELECTRON DEVICE LETTERS

Band Gap and Band Offset of Ga2O3 and (AlxGa1−x)2O3 Alloys

(2018) Tianshi Wang et al.   Physical Review Applied

MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature

(2018) Yuewei Zhang et al.   APL Materials

Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

(2017) T. Paul Chow et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ab initio velocity-field curves in monoclinic β-Ga2O3

(2017) Krishnendu Ghosh et al.   JOURNAL OF APPLIED PHYSICS

Electron mobility in monoclinic β-Ga2O3—Effect of plasmon-phonon coupling, anisotropy, and confinement

(2017) Krishnendu Ghosh et al.   JOURNAL OF MATERIALS RESEARCH

Fundamental limits on the electron mobility ofβ-Ga2O3

(2017) Youngho Kang et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Advanced capabilities for materials modelling with Quantum ESPRESSO

(2017) P Giannozzi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Schottky barrier height of Ni toβ-(AlxGa1−x)2O3with different compositions grown by plasma-assisted molecular beam epitaxy

(2017) Elaheh Ahmadi et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

(2017) J. Y. Tsao et al.   Advanced Electronic Materials

Ab initio calculation of electron–phonon coupling in monoclinic β-Ga2O3 crystal

(2016) Krishnendu Ghosh et al.   APPLIED PHYSICS LETTERS

Intrinsic electron mobility limits inβ-Ga2O3

(2016) Nan Ma et al.   APPLIED PHYSICS LETTERS

Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

(2016) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

(2016) Akito Kuramata et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Growth of β-Ga 2 O 3 single crystals using vertical Bridgman method in ambient air

(2016) K. Hoshikawa et al.   JOURNAL OF CRYSTAL GROWTH

Scaling-Up of Bulk β-Ga2O3Single Crystals by the Czochralski Method

(2016) Zbigniew Galazka et al.   ECS Journal of Solid State Science and Technology

Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga 2 O 3 Layers Grown by MOVPE on (010)-Oriented Substrates

(2016) Michele Baldini et al.   ECS Journal of Solid State Science and Technology

High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

(2015) Toshiyuki Oishi et al.   Applied Physics Express

Raman scattering study of LO phonon–plasmon coupled modes in p-type InGaAs

(2015) Ramon Cuscó et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Rode's iterative calculation of surface optical phonon scattering limited electron mobility in N-polar GaN devices

(2015) Krishnendu Ghosh et al.   JOURNAL OF APPLIED PHYSICS

Synthesis of wide bandgap Ga2O3(Eg ∼ 4.6-4.7 eV) thin films on sapphire by low pressure chemical vapor deposition

(2015) Subrina Rafique et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy

(2014) Hisashi Murakami et al.   Applied Physics Express

Inelastic carrier lifetime in a coupled graphene/electron-phonon system: Role of plasmon-phonon coupling

(2014) Seongjin Ahn et al.   PHYSICAL REVIEW B

Homoepitaxial growth of β-Ga2O3layers by metal-organic vapor phase epitaxy

(2013) Guenter Wagner et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

(2012) Kohei Sasaki et al.   Applied Physics Express

Maximally localized Wannier functions: Theory and applications

(2012) Nicola Marzari et al.   REVIEWS OF MODERN PHYSICS

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials

(2009) Paolo Giannozzi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER