期刊
APPLIED PHYSICS LETTERS
卷 115, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5123495
关键词
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资金
- Air Force Office of Scientific Research [FA9550-18-1-0479]
- National Science Foundation [1810041]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1810041] Funding Source: National Science Foundation
(010) beta-(AlxGa1-x)(2)O-3 thin films were grown on (010) beta-Ga2O3 substrates via metalorganic chemical vapor deposition with up to 40% Al incorporation by systematic tuning of the Trimethylaluminum (TMAl)/triethylgallium molar flow rate ratio and growth temperature. High crystalline quality with pure beta-phase (AlxGa1-x)(2)O-3 was achieved for films with Al composition x < 27%, while a higher Al composition induced phase segregation which was observed via X-ray diffraction spectra. Al incorporation was highly dependent on the growth temperature, chamber pressure, oxygen partial pressure, and TMAl molar flow rate. Atomic resolution scanning transmission electron microscopy (STEM) imaging demonstrated a high crystalline quality beta-(Al0.15Ga0.85)(2)O-3 film with an epitaxial interface. High resolution STEM imaging of (AlxGa1-x)(2)O-3/Ga2O3 superlattice (SL) structures revealed superior crystalline quality for the 23% Al composition. When the Al composition reaches 40%, the SL structure maintained the beta-phase, but the interfaces became rough with inhomogeneous Al distribution. N-type doping using Si in beta-(AlxGa1-x)(2)O-3 films with the Al composition up to 33.4% was demonstrated.
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