Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer
出版年份 2020 全文链接
标题
Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer
作者
关键词
-
出版物
Micromachines
Volume 11, Issue 10, Pages 905
出版商
MDPI AG
发表日期
2020-09-30
DOI
10.3390/mi11100905
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