Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer
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Title
Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer
Authors
Keywords
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Journal
Micromachines
Volume 11, Issue 10, Pages 905
Publisher
MDPI AG
Online
2020-09-30
DOI
10.3390/mi11100905
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