Recent Advances in β-Ga2O3–Metal Contacts

High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure

(2018) Xiaodong Yan et al.   APPLIED PHYSICS LETTERS

Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

(2018) Man Hoi Wong et al.   APPLIED PHYSICS LETTERS

Guest Editorial: The dawn of gallium oxide microelectronics

(2018) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

A comparative study of wet etching and contacts on (2¯01) and (010) oriented β-Ga 2 O 3

(2018) Soohwan Jang et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Recent progress in the growth of β-Ga 2 O 3 for power electronics applications

(2018) Michele Baldini et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

A review of Ga2O3 materials, processing, and devices

(2018) S. J. Pearton et al.   Applied Physics Reviews

Ge-Doped ${\beta }$ -Ga2O3 MOSFETs

(2017) Neil Moser et al.   IEEE ELECTRON DEVICE LETTERS

Ga2O3MOSFETs Using Spin-On-Glass Source/Drain Doping Technology

(2017) Ke Zeng et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

(2017) Hong Zhou et al.   IEEE ELECTRON DEVICE LETTERS

$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

(2017) Andrew Joseph Green et al.   IEEE ELECTRON DEVICE LETTERS

Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

(2017) Patrick H. Carey et al.   AIP Advances

Solar-Blind Metal-Semiconductor-Metal Photodetectors Based on an Exfoliated β-Ga 2 O 3 Micro-Flake

(2017) Sooyeoun Oh et al.   ECS Journal of Solid State Science and Technology

Perspective—Opportunities and Future Directions for Ga 2 O 3

(2017) Michael A. Mastro et al.   ECS Journal of Solid State Science and Technology

Fabrication of Metal-Deposited Indium Tin Oxides: Its Applications to 385 nm Light-Emitting Diodes

(2016) Min Ju Kim et al.   ACS Applied Materials & Interfaces

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

(2016) Kelson D. Chabak et al.   APPLIED PHYSICS LETTERS

Intrinsic electron mobility limits inβ-Ga2O3

(2016) Nan Ma et al.   APPLIED PHYSICS LETTERS

Ohmic contacts to Gallium Nitride materials

(2016) Giuseppe Greco et al.   APPLIED SURFACE SCIENCE

Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

(2016) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

(2016) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

Current status of Ga2O3power devices

(2016) Masataka Higashiwaki et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Formation of indium–tin oxide ohmic contacts for β-Ga2O3

(2016) Takayoshi Oshima et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Electron channel mobility in silicon-doped Ga2O3MOSFETs with a resistive buffer layer

(2016) Man Hoi Wong et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

(2016) Andrew M. Armstrong et al.   JOURNAL OF APPLIED PHYSICS

Investigation of Different Metals as Ohmic Contacts to β-Ga2O3: Comparison and Analysis of Electrical Behavior, Morphology, and Other Physical Properties

(2016) Yao Yao et al.   JOURNAL OF ELECTRONIC MATERIALS

Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics

(2016) Janghyuk Kim et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Analysis of the scattering mechanisms controlling electron mobility inβ-Ga2O3crystals

(2016) Antonella Parisini et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Recent progress in Ga2O3power devices

(2016) Masataka Higashiwaki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Contacting Mechanically Exfoliated β-Ga 2 O 3 Nanobelts for (Opto)electronic Device Applications

(2016) Jinho Bae et al.   ECS Journal of Solid State Science and Technology

Communication—A (001) β-Ga2O3MOSFET with +2.9 V Threshold Voltage and HfO2Gate Dielectric

(2016) Marko J. Tadjer et al.   ECS Journal of Solid State Science and Technology

Band Alignments of Atomic Layer Deposited ZrO 2 and HfO 2 High-k Dielectrics with (-201) β-Ga 2 O 3

(2016) Virginia D. Wheeler et al.   ECS Journal of Solid State Science and Technology

Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High-Performance Multilayer MoS2 FETs

(2016) Shubhadeep Bhattacharjee et al.   Advanced Electronic Materials

Anomalous Fe diffusion in Si-ion-implanted β–Ga2O3 and its suppression in Ga2O3 transistor structures through highly resistive buffer layers

(2015) Man Hoi Wong et al.   APPLIED PHYSICS LETTERS

Development of solar-blind photodetectors based on Si-implanted β-Ga_2O_3

(2015) Sooyeoun Oh et al.   OPTICS EXPRESS

High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy

(2014) Joong Gun Oh et al.   APPLIED PHYSICS LETTERS

High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

(2014) Wan Sik Hwang et al.   APPLIED PHYSICS LETTERS

Si-Ion Implantation Doping in β-Ga2O3and Its Application to Fabrication of Low-Resistance Ohmic Contacts

(2013) Kohei Sasaki et al.   Applied Physics Express

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

(2013) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

(2013) Kohei Sasaki et al.   IEEE ELECTRON DEVICE LETTERS

Development of gallium oxide power devices

(2013) Masataka Higashiwaki et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3

(2012) M. Mohamed et al.   APPLIED PHYSICS LETTERS

Multi-component transparent conducting oxides: progress in materials modelling

(2011) Aron Walsh et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

The electronic structure of β-Ga2O3

(2010) M. Mohamed et al.   APPLIED PHYSICS LETTERS

Czochralski growth and characterization of β-Ga2O3 single crystals

(2010) Z. Galazka et al.   CRYSTAL RESEARCH AND TECHNOLOGY

Transparent conducting oxides for electrode applications in light emitting and absorbing devices

(2010) Huiyong Liu et al.   SUPERLATTICES AND MICROSTRUCTURES

Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3Substrates

(2008) Takayoshi Oshima et al.   Applied Physics Express

Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

(2008) Hideo Aida et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Factors controlling electron transport properties in transparent amorphous oxide semiconductors

(2008) Hideo Hosono et al.   JOURNAL OF NON-CRYSTALLINE SOLIDS

Nature of the Band Gap ofIn2O3Revealed by First-Principles Calculations and X-Ray Spectroscopy

(2008) Aron Walsh et al.   PHYSICAL REVIEW LETTERS