期刊
APPLIED PHYSICS LETTERS
卷 112, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5002138
关键词
-
资金
- National Science Foundation (NSF) [ECCS-1653870, CCF-1618038]
In this work, we study the high critical breakdown field in beta-Ga2O3 perpendicular to its (100) crystal plane using a beta-Ga2O3/graphene vertical heterostructure. Measurements indicate a record breakdown field of 5.2 MV/cm perpendicular to the (100) plane that is significantly larger than the previously reported values on lateral beta-Ga2O3 field-effect-transistors (FETs). This result is compared with the critical field typically measured within the (100) crystal plane, and the observed anisotropy is explained through a combined theoretical and experimental analysis. Published by AIP Publishing.
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