Review
Materials Science, Multidisciplinary
Masataka Higashiwaki
Summary: Beta-gallium oxide, with its large bandgap energy and ability to synthesize large-size single-crystal bulks, has gained attention in the past decade for its potential applications in next-generation power devices. Research on its material properties and growth technologies has become active worldwide, leading to the development of state-of-the-art diodes and transistors with promising future prospects.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2021)
Article
Materials Science, Multidisciplinary
Sergiy Khartsev, Mattias Hammar, Nils Nordell, Aleksejs Zolotarjovs, Juris Purans, Anders Hallen
Summary: Reverse-biased Er-doped beta-Ga2O3 Schottky barrier diodes, prepared by pulsed laser deposition, exhibit strong electroluminescence with a rectification ratio of over nine orders of magnitude and a leakage current density of 0.2-0.4 A cm(-2). The electroluminescence is homogeneously distributed across the diode area and the peak wavelengths are consistent with reported transitions for Er3+.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2022)
Article
Chemistry, Multidisciplinary
Li Jiang, Quanping Zhang, Yuanping Chen, Xiaohong Yan, Yong Wang
Summary: In this study, vertical-geometry Pt/(010) beta-Ga2O3 Schottky barrier diodes (SBDs) with different large areas were fabricated and analyzed. The electrical properties of the diodes and their uniformity were investigated. The results showed that the diodes exhibited high rectifying ratio and had strong temperature dependence on various parameters.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
(2023)
Article
Physics, Applied
Yibo Wang, Wenhui Xu, Genquan Han, Tiangui You, Fengwen Mu, Haodong Hu, Yan Liu, Xinchuang Zhang, Hao Huang, Tadatomo Suga, Xin Ou, Xiaohua Ma, Yue Hao
Summary: The article reports on the interface performance of the beta-Ga2O3((2) over bar 01)/TiN Schottky barrier diode (SBD) on a heterogeneous integrated Ga2O3-Al2O3-Si (GaOISi) substrate. The SBD exhibits stable characteristics and consistent on-state to off-state current ratio at different temperatures. Additionally, the effective barrier height φ(B, eff) decreases with increasing temperature, leading to a decrease in V-on.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Optics
Bo Peng, Lei Yuan, Hongpeng Zhang, Hongjuan Cheng, Shengnan Zhang, Yimen Zhang, Yuming Zhang, Renxu Jia
Summary: A Schottky barrier diode solar-blind photodetector was fabricated on a single crystal beta-Ga2O3, showcasing a high light to dark current ratio and fast response speed at 254 nm. The device exhibits self-powered action and linearly enhanced photocurrent with increasing illumination intensity. The photoresponse time varies under different bias conditions, suggesting a mechanism involving the release of trapped carriers under applied bias.
Review
Physics, Applied
Xueqiang Ji, Chao Lu, Zuyong Yan, Li Shan, Xu Yan, Jinjin Wang, Jianying Yue, Xiaohui Qi, Zeng Liu, Weihua Tang, Peigang Li
Summary: Gallium oxide (Ga2O3) is an ultra-wide bandgap semiconductor with a large dielectric constant and excellent physical and chemical stability. Despite the difficulties with p-type doping, Ga2O3 is irreplaceable for high-power electronic devices.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Review
Physics, Applied
Chao Lu, Xueqiang Ji, Zeng Liu, Xu Yan, Nianpeng Lu, Peigang Li, Weihua Tang
Summary: This review summarizes recent research progress on beta-Ga2O3-metal contacts, including related theories, measurements, fabrication processes, and control methods. These studies provide important insights for both theoretical understanding of the metal/semiconductor interface and the fabrication process for engineering applications of Ga2O3-based devices.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Review
Engineering, Electrical & Electronic
Hardhyan Sheoran, Vikram Kumar, Rajendra Singh
Summary: This study comprehensively reviews the recent development of metal-semiconductor contacts on ultrawide bandgap beta-gallium oxide (beta-Ga2O3). The study starts by introducing the basic concepts of metal-semiconductor contacts and then summarizes the current literature on ohmic and Schottky contacts on beta-Ga2O3. Finally, the status of high-power Schottky diode contact on beta-Ga2O3 is presented.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Zeng Liu, Ling Du, Shao-Hui Zhang, Lei Li, Zhao-Ying Xi, Jin-Cheng Tang, Jun-Peng Fang, Mao-Lin Zhang, Li-Li Yang, Shan Li, Pei-Gang Li, Yu-Feng Guo, Wei-Hua Tang
Summary: A metal-semiconductor-metal (MSM) photodetector was constructed using microprocessing techniques, incorporating a β-gallium oxide thin film. The photodetector exhibited high photoresponsivity, specific detectivity, external quantum efficiency, and a linear dynamic range under 254-nm UV light illumination. The high photoconductive gain observed may lead to persistent photocurrent and suggest potential use in high deep-ultraviolet photoresponse applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Ailing Pan, Yingzhe Wang, Xuefeng Zheng, Yuehua Hong, Fang Zhang, Xiangyu Zhang, Ling Lv, Yanrong Cao, Xiaohua Ma, Yue Hao
Summary: The transformation of current transport mechanism and defect behavior in beta-gallium oxide Schottky barrier diodes (SBDs) under constant forward bias stress is investigated in this study. It is found that the predominant transport mechanism for both forward and reverse leakage current changes from thermionic emission to trap-assisted tunneling after stress. The generation of shallow-level defects and ionization of newly generated shallow donors contribute to the enhancement of trap-assisted tunneling.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Nanoscience & Nanotechnology
Palvan Seyidov, Joel B. Varley, Ymir Kalmann Frodason, Detlef Klimm, Lasse Vines, Zbigniew Galazka, Ta-Shun Chou, Andreas Popp, Klaus Irmscher, Andreas Fiedler
Summary: The thermal stability of different Schottky contacts (Au, Pt, and Ni) on (100) beta-Ga2O3 single crystals grown by the Czochralski method is investigated. The contact-dependent defect levels and behavior changes during temperature cycling were observed.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Chemistry, Physical
Fatima Matar, Ying-Li Shi, Francis Chi-Chung Ling, Amar Salih, Curtis P. Irvine, Sujeewa De Silva, Matthew R. Phillips, Cuong Ton-That
Summary: This study fabricates monoclinic phase (BixGa1-x)2O3 ternary alloys on c-plane sapphire via magnetron co-sputtering and investigates their electrical properties. It is found that alloying Ga2O3 with Bi2O3 decreases the bandgap and lowers the self-trapping energy for holes. The conductivity of (Bi0.04Ga0.96)2O3 film is lower than that of undoped Ga2O3, likely due to the compensation of shallow donors by acceptors activated by Bi2O3-induced upward shift of the valence band edge.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Engineering, Electrical & Electronic
Ravikiran Lengare, Chandan Joishi, Saurabh Lodha
Summary: In this study, we have predicted improved electrostatic fields in a beta-Ga2O3 trench MIS SBD by using a bilayer dielectric as the insulator layer. This design leads to better breakdown characteristics and a higher power figure-of-merit compared with single-layer dielectric insulators.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Physics, Multidisciplinary
Fatih Akyol
Summary: Monoclinic gallium oxide (beta-Ga2O3) has attracted great research interest for solar blind photodetector applications due to its bandgap and high quality crystal growth. However, simulations show that unless extremely low hole mobility in the range of 1 x 10(-10) cm(2) V-1 s(-1) - 1 x 10(-12) cm(2) V-1 s(-1) is reported, gain in these devices cannot be attributed to self-trapped hole formation.
TURKISH JOURNAL OF PHYSICS
(2021)
Article
Engineering, Electrical & Electronic
Boyan Wang, Ming Xiao, Jack Knoll, Cyril Buttay, Kohei Sasaki, Guo-Quan Lu, Christina Dimarino, Yuhao Zhang
Summary: This study investigates the thermal resistance of a Ga2O3 Schottky barrier diode, demonstrating the importance of proper thermal management for ensuring device reliability and performance in high-power applications.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Physics, Applied
Asanka Jayawardena, Rahul P. Ramamurthy, Ayayi C. Ahyi, Dallas Morisette, Sarit Dhar
APPLIED PHYSICS LETTERS
(2018)
Article
Physics, Applied
Yuewei Zhang, Zane Jamal-Eddine, Fatih Akyol, Sanyam Bajaj, Jared M. Johnson, Gabriel Calderon, Andrew A. Allerman, Michael W. Moseley, Andrew M. Armstrong, Jinwoo Hwang, Siddharth Rajan
APPLIED PHYSICS LETTERS
(2018)
Article
Engineering, Electrical & Electronic
Peter A. Butler, William M. Waller, Michael J. Uren, Andrew Allerman, Andrew Armstrong, Robert Kaplar, Martin Kuball
IEEE ELECTRON DEVICE LETTERS
(2018)
Article
Engineering, Electrical & Electronic
Asanka Jayawardena, X. Shen, P. M. Mooney, Sarit Dhar
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2018)
Article
Materials Science, Multidisciplinary
Vahid Mirkhani, Kosala Yapabandara, Shiqiang Wang, Min Prasad Khanal, Sunil Uprety, Muhammad Shehzad Sultan, Burcu Ozden, Ayayi Claude Ahyi, Michael C. Hamilton, Mobbassar Hassan Sk, Minseo Park
Article
Physics, Applied
I. U. Jayawardhena, R. P. Ramamurthy, D. Morisette, A. C. Ahyi, R. Thorpe, M. A. Kuroda, L. C. Feldman, S. Dhar
Summary: Silicon carbide (4H) based metal-oxide-semiconductor field-effect transistors offer capabilities in high power and high temperature that silicon cannot achieve. This research investigates the use of deposited Al2O3 dielectrics instead of thermal oxidation, resulting in improved electronic properties. The optimal structure involves preparation of a nitrided surface through NO annealing, hydrogen exposure, and Al2O3 deposition, leading to high inversion layer field-effect mobilities. Leakage currents and interface breakdown are also observed in various Al2O3/4H-SiC MOS structures.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Physics, Applied
Christopher J. Klingshirn, Asanka Jayawardena, Sarit Dhar, Rahul P. Ramamurthy, Dallas Morisette, Tsvetanka Zheleva, Aivars Lelis, Lourdes G. Salamanca-Riba
Summary: Analytical electron microscopy was used to investigate the chemical and structural features of (201) beta-Ga2O3 interfaces with SiO2 and Al2O3 gate oxides. The study revealed issues with the processing methods of the gate oxide affecting the interface quality and performance.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Engineering, Electrical & Electronic
Vahid Mirkhani, Shiqiang Wang, Kosala Yapabandara, Muhammad Shehzad Sultan, Min Prasad Khanal, Sunil Uprety, Burcu Ozden, Ehsan Hassani, Benjamin Schoenek, Dong-Joo Kim, Tae-Sik Oh, Ayayi Claude Ahyi, Sarit Dhar, Michael C. Hamilton, Mobbassar Hassan Sk, Minseo Park
Summary: Solution-based bottom-gate zinc oxide thin film transistors were fabricated and remained functional and stable under extreme gamma irradiation conditions. The removal of the channel surface due to the cumulative effect of displacement damage near the ZnO surface was observed through thickness measurements and optical images. The impact of displacement damage on the device characteristics was discussed in terms of surface/bulk effects.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2021)
Article
Physics, Applied
Suman Das, Tamara Isaacs-Smith, Ayayi Ahyi, Marcelo A. Kuroda, Sarit Dhar
Summary: Nitridation of the gate oxide can enhance the performance of p-channel 4H-SiC MOSFETs at high temperatures, resulting in more reliable operation. The incorporation of nitrogen at the interface reduces trap density and improves the threshold voltage behavior with increasing temperature.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Physics, Applied
Suman Das, Hengfei Gu, Lu Wang, Ayayi Ahyi, Leonard C. Feldman, Eric Garfunkel, Marcelo A. Kuroda, Sarit Dhar
Summary: We propose an N-2 based annealing treatment to eliminate interface traps in 4H-SiC. The treatment shows potential as a safer and more cost-effective alternative to nitric oxide. The effectiveness of the treatment varies between n- and p-type devices, with N-2 annealing being more effective for p-type devices. The breakdown voltages of the devices also differ between the two treatments, with N-2 annealed devices having lower breakdown voltages.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Multidisciplinary Sciences
Hao Deng, Asanka Jayawardena, Jianxiong Chan, Sher Maine Tan, Tuncay Alan, Patrick Kwan
Summary: The portable point-of-care nucleic acid amplification test developed for rapid detection of active COVID-19 infection is easy to operate, provides results in approximately 35 minutes, and has the potential for effective testing in community settings.
SCIENTIFIC REPORTS
(2021)
