Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High-Performance Multilayer MoS2 FETs
出版年份 2016 全文链接
标题
Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High-Performance Multilayer MoS2
FETs
作者
关键词
-
出版物
Advanced Electronic Materials
Volume 3, Issue 1, Pages 1600358
出版商
Wiley
发表日期
2016-12-15
DOI
10.1002/aelm.201600358
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Electrical Properties of Synthesized Large-Area MoS2 Field-Effect Transistors Fabricated with Inkjet-Printed Contacts
- (2016) Tae-Young Kim et al. ACS Nano
- Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET
- (2016) Shubhadeep Bhattacharjee et al. IEEE ELECTRON DEVICE LETTERS
- Surface State Engineering of Metal/MoS2Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability
- (2016) Shubhadeep Bhattacharjee et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Surface defect passivation of MoS2 by sulfur, selenium, and tellurium
- (2016) Ying Wang et al. JOURNAL OF APPLIED PHYSICS
- Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2by Dielectric and Carrier Screening
- (2015) Zhihao Yu et al. ADVANCED MATERIALS
- Spotting 2D atomic layers on aluminum nitride thin films
- (2015) Hareesh Chandrasekar et al. NANOTECHNOLOGY
- Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
- (2015) Xu Cui et al. Nature Nanotechnology
- Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
- (2014) Deep Jariwala et al. ACS Nano
- Separation of interlayer resistance in multilayer MoS2 field-effect transistors
- (2014) Junhong Na et al. APPLIED PHYSICS LETTERS
- Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
- (2014) Lingming Yang et al. NANO LETTERS
- Electronics based on two-dimensional materials
- (2014) Gianluca Fiori et al. Nature Nanotechnology
- Influence of O2flow rate on HfO2gate dielectrics for back-gated graphene transistors
- (2014) Kolla Lakshmi Ganapathi et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering
- (2014) Zhihao Yu et al. Nature Communications
- Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
- (2013) Sheneve Z. Butler et al. ACS Nano
- Optimization of HfO2 films for high transconductance back gated graphene transistors
- (2013) Kolla Lakshmi Ganapathi et al. APPLIED PHYSICS LETTERS
- An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si
- (2013) Hareesh Chandrasekar et al. APPLIED PHYSICS LETTERS
- Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films
- (2013) Han Liu et al. NANO LETTERS
- Measurement of mobility in dual-gated MoS2 transistors
- (2013) Michael S. Fuhrer et al. Nature Nanotechnology
- Screening and interlayer coupling in multilayer MoS2
- (2013) Saptarshi Das et al. Physica Status Solidi-Rapid Research Letters
- Mobility enhancement and temperature dependence in top-gated single-layer MoS2
- (2013) Zhun-Yong Ong et al. PHYSICAL REVIEW B
- One-Dimensional Electrical Contact to a Two-Dimensional Material
- (2013) L. Wang et al. SCIENCE
- Channel Length Scaling of MoS2 MOSFETs
- (2012) Han Liu et al. ACS Nano
- $\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric
- (2012) Han Liu et al. IEEE ELECTRON DEVICE LETTERS
- High Performance Multilayer MoS2 Transistors with Scandium Contacts
- (2012) Saptarshi Das et al. NANO LETTERS
- Phonon-limited mobility inn-type single-layer MoS2from first principles
- (2012) Kristen Kaasbjerg et al. PHYSICAL REVIEW B
- Integrated Circuits and Logic Operations Based on Single-Layer MoS2
- (2011) Branimir Radisavljevic et al. ACS Nano
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Effect of high-κgate dielectrics on charge transport in graphene-based field effect transistors
- (2010) Aniruddha Konar et al. PHYSICAL REVIEW B
- Deposition of High-QualityHfO2on Graphene and the Effect of Remote Oxide Phonon Scattering
- (2010) K. Zou et al. PHYSICAL REVIEW LETTERS
Add your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload NowAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started