Improvement of the photo-bias stability of the Zn–Sn–O field effect transistors by an ozone treatment
出版年份 2012 全文链接
标题
Improvement of the photo-bias stability of the Zn–Sn–O field effect transistors by an ozone treatment
作者
关键词
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出版物
JOURNAL OF MATERIALS CHEMISTRY
Volume 22, Issue 22, Pages 10994
出版商
Royal Society of Chemistry (RSC)
发表日期
2012-04-19
DOI
10.1039/c2jm30242j
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Optical modeling and experimental verification of light induced phenomena in In-Ga-Zn-O thin film transistors with varying gate insulator thickness
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- Role of ZrO2 incorporation in the suppression of negative bias illumination-induced instability in Zn–Sn–O thin film transistors
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- Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment
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- High-Performance Solution-Processed Amorphous Zinc−Indium−Tin Oxide Thin-Film Transistors
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