Improvement in the negative bias illumination temperature stress instability of In-Ga-Zn-O thin film transistors using an Al2O3 buffer layer

出版年份 2011 全文链接

标题

作者

关键词

出版物

Volume 5, Issue 5-6, Pages 178-180

出版商

Wiley

发表日期

2011-04-12

DOI

10.1002/pssr.201105090

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