High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol–gel method

High-Performance Flexible Transparent Thin-Film Transistors Using a Hybrid Gate Dielectric and an Amorphous Zinc Indium Tin Oxide Channel

(2010) Jun Liu et al.   ADVANCED MATERIALS

Solution-processed zinc–tin oxide thin-film transistors with low interfacial trap density and improved performance

(2010) Chen-Guan Lee et al.   APPLIED PHYSICS LETTERS

A High Performance Inkjet Printed Zinc Tin Oxide Transparent Thin-Film Transistor Manufactured at the Maximum Process Temperature of 300°C and Its Stability Test

(2010) Christophe Avis et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Thin Film Transistors with Ink-Jet Printed Amorphous Oxide Semiconductors

(2010) Dongjo Kim et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

(2010) K. K. Banger et al.   NATURE MATERIALS

Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors

(2009) Sunho Jeong et al.   ADVANCED MATERIALS

Mapping out the distribution of electronic states in the mobility gap of amorphous zinc tin oxide

(2009) Peter T. Erslev et al.   APPLIED PHYSICS LETTERS

Inkjet printed high-mobility indium zinc tin oxide thin film transistors

(2009) Doo-Hyoung Lee et al.   JOURNAL OF MATERIALS CHEMISTRY

Inkjet-Printed Zinc Tin Oxide Thin-Film Transistor

(2009) Dongjo Kim et al.   LANGMUIR

Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors

(2009) Bhola N. Pal et al.   NATURE MATERIALS

Transparent Al–Zn–Sn–O thin film transistors prepared at low temperature

(2008) Doo-Hee Cho et al.   APPLIED PHYSICS LETTERS

Impact of Process Optimizations on the Electrical Performance of High-k Layers Deposited by Aqueous Chemical Solution Deposition

(2008) S. Van Elshocht et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY