Effect of implanted species on thermal evolution of ion-induced defects in ZnO

Crucial role of implanted atoms on dynamic defect annealing in ZnO

(2014) A. Yu. Azarov et al.   APPLIED PHYSICS LETTERS

Nitrogen and vacancy clusters in ZnO

(2013) Filip Tuomisto et al.   JOURNAL OF MATERIALS RESEARCH

Paramagnetism and antiferromagnetic interactions in single-phase Fe-implanted ZnO

(2013) L M C Pereira et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Impurity Sublattice Localization in ZnO Revealed by Li Marker Diffusion

(2013) A. Yu. Azarov et al.   PHYSICAL REVIEW LETTERS

Defect microstructure in heavy-ion-bombarded (0001) ZnO

(2012) M.T. Myers et al.   ACTA MATERIALIA

Impurity-limited lattice disorder recovery in ion-implanted ZnO

(2012) A. Yu. Azarov et al.   APPLIED PHYSICS LETTERS

P-type ZnO thin films achieved by N+ ion implantation through dynamic annealing process

(2012) M. A. Myers et al.   APPLIED PHYSICS LETTERS

Annealing of ion implanted CdZnO

(2012) A Yu Azarov et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Interface-mediated suppression of radiation damage in GaN

(2012) S. Charnvanichborikarn et al.   SCRIPTA MATERIALIA

Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO

(2011) Guillaume Perillat-Merceroz et al.   JOURNAL OF APPLIED PHYSICS

Structural and photoluminescence properties of Gd implanted ZnO single crystals

(2011) P. P. Murmu et al.   JOURNAL OF APPLIED PHYSICS

Annealing effect and photoluminescence properties in Tm+-implanted ZnO crystal

(2011) Xianbing Ming et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Thermally induced surface instability in ion-implanted MgxZn1−xO films

(2011) A. Yu. Azarov et al.   PHYSICAL REVIEW B

Identification of substitutional Li inn-type ZnO and its role as an acceptor

(2011) K. M. Johansen et al.   PHYSICAL REVIEW B

Density of displacement cascades for cluster ions: An algorithm of calculation and the influence on damage formation in ZnO and GaN

(2011) P. A. Karaseov et al.   SEMICONDUCTORS

Origin of reverse annealing effect in hydrogen-implanted silicon

(2010) Z. F. Di et al.   APPLIED PHYSICS LETTERS

Effect of pre-existing disorder on surface amorphization in GaN

(2010) A. Yu. Azarov et al.   JOURNAL OF APPLIED PHYSICS

Monte Carlo simulations of ion channeling in crystals containing extended defects

(2010) A. Turos et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Ferromagnetism in ZnO- and GaN-Based Diluted Magnetic Semiconductors: Achievements and Challenges

(2010) Vitaliy Avrutin et al.   PROCEEDINGS OF THE IEEE

Why nitrogen cannot lead to p-type conductivity in ZnO

(2009) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

Local chemical states and thermal stabilities of nitrogen dopants in ZnO film studied by temperature-dependent x-ray photoelectron spectroscopy

(2009) X. H. Li et al.   APPLIED PHYSICS LETTERS

Theory of doping properties of Ag acceptors in ZnO

(2009) O. Volnianska et al.   PHYSICAL REVIEW B

Fundamentals of zinc oxide as a semiconductor

(2009) Anderson Janotti et al.   REPORTS ON PROGRESS IN PHYSICS

Structural damage in ZnO bombarded by heavy ions

(2009) A.Yu. Azarov et al.   VACUUM

Implantation effects of low energy H and D ions in germanium at −120°C and room temperature

(2008) Nicholas Desrosiers et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Vacancy clustering and acceptor activation in nitrogen-implanted ZnO

(2008) Thomas Moe Børseth et al.   PHYSICAL REVIEW B