P-type ZnO thin films achieved by N+ ion implantation through dynamic annealing process
出版年份 2012 全文链接
标题
P-type ZnO thin films achieved by N+ ion implantation through dynamic annealing process
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 101, Issue 11, Pages 112101
出版商
AIP Publishing
发表日期
2012-09-11
DOI
10.1063/1.4751467
参考文献
相关参考文献
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- Effect of different annealing temperature on Sb-doped ZnO thin films prepared by pulsed laser deposition on sapphire substrates
- (2011) Ziwen Zhao et al. APPLIED SURFACE SCIENCE
- Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering
- (2011) C. K. To et al. JOURNAL OF APPLIED PHYSICS
- Electrical and microstructural properties of N+ ion-implanted ZnO and ZnO:Ag thin films
- (2011) Michelle A. Myers et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
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- (2010) A. Yu. Azarov et al. JOURNAL OF APPLIED PHYSICS
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- Structural damage in ZnO bombarded by heavy ions
- (2009) A.Yu. Azarov et al. VACUUM
- Ag–N dual-accept doping for the fabrication of p-type ZnO
- (2008) Wang Bin et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition
- (2008) H. S. Kim et al. APPLIED PHYSICS LETTERS
- Effects of 120keV nitrogen and its fluence on the structural, electrical, and optical properties of ZnO film
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- Vacancy clustering and acceptor activation in nitrogen-implanted ZnO
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