4.6 Article

Effect of pre-existing disorder on surface amorphization in GaN

期刊

JOURNAL OF APPLIED PHYSICS
卷 108, 期 3, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3462380

关键词

-

资金

  1. RFFI [09-08-92657, 08-08-00585]
  2. LLNL [DE-AC52-07NA27344]
  3. Norwegian Research Council

向作者/读者索取更多资源

Single crystal GaN epilayers with pre-existing surface disordered layers are bombarded at room temperature with 40 and 100 keV P ions. Stable lattice defects are studied by Rutherford backscattering/channeling spectrometry. Results show that the rate of planar surface amorphization is independent of the concentration of pre-existing defects near the amorphous/crystalline (a/c) interface. In contrast, the formation of stable defects in the crystal bulk in the vicinity of an a/c interface is influenced by the presence of the interface. These experimental observations suggest that the a/c interface, as compared to stable bulk damage, is a more efficient sink for mobile point defects with respect to both processes of point defect recombination and trapping. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3462380]

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

Article Physics, Multidisciplinary

Disorder-Induced Ordering in Gallium Oxide Polymorphs

Alexander Azarov, Calliope Bazioti, Vishnukanthan Venkatachalapathy, Ponniah Vajeeston, Edouard Monakhov, Andrej Kuznetsov

Summary: In this study, the phenomenon of polymorphism in gallium oxide is investigated. It is found that the amorphization can be significantly suppressed by the phase transition, leading to the fabrication of a highly oriented single-phase film. A novel mode of lateral polymorphic regrowth, not previously observed in solids, is also discovered. These findings open up new directions for research on polymorphs in Ga2O3 and potentially in other materials.

PHYSICAL REVIEW LETTERS (2022)

Article Physics, Applied

Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide

S. B. Kjeldby, A. Azarov, P. D. Nguyen, V. Venkatachalapathy, R. Miksova, A. Mackova, A. Kuznetsov, O. Prytz, L. Vines

Summary: Defect accumulation and annealing phenomena in Si-implanted monoclinic gallium oxide wafers were studied using RBS/c, XRD, and (S)TEM. The accumulation of radiation disorder was found to be accompanied by strain accumulation, resulting in crystalline-to-crystalline phase transitions. Annealing of selected samples showed complex structural transformations, which were influenced by the fluence and temperature.

JOURNAL OF APPLIED PHYSICS (2022)

Article Engineering, Mechanical

A peridynamic elasto-plastic damage model for ion-irradiated materials

M. Nowak, K. Mulewska, A. Azarov, L. Kurpaska, A. Ustrzycka

Summary: This study presents a novel peridynamic constitutive relations for predicting plastic deformation and damage evolution in irradiated materials. The plastic behavior of the material, where radiation induced defects contribute to peridynamic porosity, is described by the Gurson-Tvergaard-Needleman (GTN) yield criterion with irradiation hardening. The physical relevance of coupling the porosity with the nonlinear irradiation hardening is discussed, and the expressions for the yield function, kinetics of porosity evolution, irradiation hardening, and plastic flow rule are derived.

INTERNATIONAL JOURNAL OF MECHANICAL SCIENCES (2023)

Article Chemistry, Physical

Combined Au/Ag nanoparticle creation in ZnO nanopillars by ion implantation for optical response modulation and photocatalysis

A. Mackova, A. Jagerova, O. Lalik, R. Miksova, D. Poustka, J. Mistrik, V Holy, J. D. Schutter, U. Kentsch, P. Marvan, A. Azarov, A. Galeckas

Summary: ZnO nanopillars were implanted with Au-400 keV and Ag-252 keV ions at different fluences. The presence of Ag and Au in the ZnO nanopillar layers was confirmed by Rutherford Back-Scattering spectrometry (RBS), which matched well with theoretical calculations. Ion implantation resulted in a reduction in the thickness of the ZnO nanopillar layer. Spectroscopic Ellipsometry (SE) showed a decrease in refractive index in the nanopillar parts with embedded Au and Ag ions. XRD revealed a decrease in vertical domain size due to radiation damage from Au ions. Optical activity in the nanopillars was observed using SE and diffuse reflectance spectroscopy (DRS) in the presence of Au and Ag nanoparticles. PL features linked to ZnO deep level emission were enhanced due to plasmonic interaction with metal nanoparticles created by Ag and Au implantation. Photocatalytic activity was more influenced by the nanoparticles in the layer rather than surface morphology. Dual implantation with Ag and Au ions resulted in enhanced optical activity without significant morphology deterioration compared to solely Au-ion implanted nanopillars.

APPLIED SURFACE SCIENCE (2023)

Article Physics, Applied

Tuning defect-related optical bands by channeling implants in semiconductors

Alexander Azarov, Augustinas Galeckas, Francis Chi-Chung Ling, Andrej Kuznetsov

Summary: Ion implantation is an effective method for introducing defects into semiconductors. In this study, we investigated the use of crystallographically aligned implants to control the balance between optically active defects in ZnO. Optical data and structural analysis confirmed the formation of different dominant crystalline defects in samples implanted along and off the [0001] direction. The proportions of extended and point defects in the initial as-implanted states of these samples were found to significantly influence the defect-related luminescence upon annealing. We conclude that channeling implants have value in functionalizing defects in semiconductors by tuning specific spectral contents in defect-related emission bands.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2023)

Article Instruments & Instrumentation

Ruthenium ion modification of glassy carbon: Implication on the structural evolution and migration behaviour of implanted Ru atoms

T. A. O. Jafer, T. T. Thabethe, O. S. Odutemowo, S. A. Adeojo, H. A. A. Abdelbagi, J. B. Malherbe

Summary: Glassy carbon samples were implanted with ruthenium ions and investigated using XRD, Raman spectroscopy, AFM, and SIMS to study the microstructural changes and diffusion behavior of ruthenium. The results showed that ion implantation caused amorphization and increased tensile stress in the implanted region. Annealing led to recrystallization and a change from tensile to compressive stress. SIMS results indicated the aggregation and segregation of ruthenium atoms at different temperatures, which affected the surface roughness observed by AFM.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2023)

Article Physics, Applied

High mobility of intrinsic defects in α-Ga2O3

Alexander Azarov, Ji-Hyeon Park, Dae-Woo Jeon, Andrej Kuznetsov

Summary: The migration properties of intrinsic defects in alpha-Ga2O3 were investigated by introducing lattice disorder through ion irradiation and monitoring its evolution with respect to ion dose, flux, and temperature. The results showed a significantly high mobility of intrinsic defects in alpha-Ga2O3, as evidenced by the presence of two distinct disordered regions near the surface and in the bulk, instead of the expected Gaussian shape. Furthermore, the accumulation of disorder was found to be highly sensitive to ion flux and temperature, indicating a dose-rate effect.

APPLIED PHYSICS LETTERS (2023)

Article Physics, Applied

Tuning electrical properties in Ga2O3 polymorphs induced with ion beams

A. Y. Polyakov, A. I. Kochkova, A. Azarov, V. Venkatachalapathy, A. V. Miakonkikh, A. A. Vasilev, A. V. Chernykh, I. V. Shchemerov, A. A. Romanov, A. Kuznetsov, S. J. Pearton

Summary: Ion beam fabrication of metastable polymorphs of Ga2O3, assisted by the controllable accumulation of the disorder in the lattice, is explored for its alternative approach to conventional deposition techniques. In this study, two strategies - ion implantation of silicon donors and plasma treatment with hydrogen - are investigated for tuning the electron concentration in the ion beam created metastable kappa-polymorph. The results show that silicon doping did not change the high resistive state, while hydrogen plasma treatment converted the ion beam fabricated kappa-polymorph to n-type conductivity.

JOURNAL OF APPLIED PHYSICS (2023)

Article Engineering, Electrical & Electronic

The effects of hydrogenation on the properties of heavy ion irradiated β-Ga2O3

A. Y. Polyakov, A. Kuznetsov, A. Azarov, A. V. Miakonkikh, A. V. Chernykh, A. A. Vasilev, I. V. Shchemerov, A. I. Kochkova, N. R. Matros, S. J. Pearton

Summary: Defects in lightly Sn-doped (2 x 10(16) cm(-3)) (010)-oriented bulk beta-Ga2O3 before and after Au ion implantation and hydrogen plasma treatment were studied. Au implantation introduced defects that depleted carriers and created electron traps and deep acceptors with energy levels similar to deep traps in beta-Ga2O3. Hydrogen plasma treatment enhanced the photocurrent and photo-capacitance and reduced the width of the insulating layer. The results can be explained by hydrogen passivation of Ga vacancies, which returned the region to n-type conductivity.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2023)

Article Materials Science, Coatings & Films

Thermal versus radiation-assisted defect annealing in β-Ga2O3

Alexander Azarov, Vishnukanthan Venkatachalapathy, In-Hwan Lee, Andrej Kuznetsov

Summary: Gallium oxide (Ga2O3) shows complex behavior under ion irradiation, with both functional properties and polymorphic transformations affected by ion-induced disorder. Minimizing lattice disorder can be achieved through postirradiation anneals or through implants at elevated temperatures to prevent disorder accumulation. In this study, both approaches were used to minimize radiation disorder in monoclinic beta-Ga2O3, with implants at 300℃ effectively suppressing defect formation while postirradiation anneals above 900℃ were necessary to achieve similar crystalline quality in samples implanted at room temperature.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2023)

Article Materials Science, Multidisciplinary

Reactive pulsed direct current magnetron sputtering deposition of semiconducting yttrium oxide thin film in ultralow oxygen atmosphere: A spectroscopic and structural investigation of growth dynamics

H. Arslan, I. Aulika, A. Sarakovskis, L. Bikse, M. Zubkins, A. Azarov, J. Gabrusenoks, J. Purans

Summary: An investigation was conducted on the spectroscopic and structural characterization of semiconducting yttrium oxide thin film deposited at 623 K (+/- 5K) using reactive pulsed direct current magnetron sputtering. The results indicate the formation of yttrium monoxide (YO) in the transition region between beta-Y2O3 and alpha-Y2O3, accompanied by crystalline Y2O3. The stability of monoxide is limited by the crystal size, leading to distortion in the crystal structure and the arrangement in nano-crystalline/amorphous phase.

VACUUM (2023)

Article Materials Science, Multidisciplinary

The Fe addition as an effective treatment for improving the radiation resistance of fcc NixFe1-x single-crystal alloys

E. Wyszkowska, C. Mieszczynski, L. Kurpaska, A. Azarov, W. Chrominski, I Jozwik, A. Esfandiarpour, A. Kosinska, D. Kalita, R. Diduszko, J. Jagielski, S. T. Nori, M. Alava

Summary: The radiation resistance of NixFe1-x single crystals was studied by irradiating them with Ni-58 ions and analyzing the resulting damage. It was found that the addition of iron reduced the formation of damage and increased the hardness of the alloy. Simulations showed that the presence of FeNi3 (L1(2)) phase contributed to the high hardness of the Ni0.62Fe0.38 alloy.

JOURNAL OF NUCLEAR MATERIALS (2023)

Article Instruments & Instrumentation

Combining MD-LAMMPS and MC-McChasy2 codes for dislocation simulations of Ni single crystal structure

Cyprian Mieszczynski, Przemyslaw Jozwik, Kazimierz Skrobas, Kamila Stefanska-Skrobas, Renata Ratajczak, Jacek Jagielski, Frederico Garrido, Edyta Wyszkowska, Alexander Azarov, Katharina Lorenz, Eduardo Alves

Summary: In this work, the unique capability of the new version of the McChasy code (called McChasy2) to simulate experimental energy spectra delivered by Rutherford Backscattering Spectrometry in channeling direction (RBS/C) using large atomic structures (ca. 108 atoms) is presented. The focus is on the simulations of extended structural defects (edge dislocations and loops) formed inside nickel-based single-crystal alloys, which are widely studied and promising materials for high-temperature applications.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2023)

Article Multidisciplinary Sciences

Universal radiation tolerant semiconductor

Alexander Azarov, Javier Garcia Fernandez, Junlei Zhao, Flyura Djurabekova, Huan He, Ru He, Oystein Prytz, Lasse Vines, Umutcan Bektas, Paul Chekhonin, Nico Klingner, Gregor Hlawacek, Andrej Kuznetsov

Summary: The γ/β double polymorph Ga2O3 structures demonstrate exceptionally high radiation tolerance, tolerating disorder equivalent to hundreds of displacements per atom. This discovery highlights a new class of radiation tolerant semiconductors.

NATURE COMMUNICATIONS (2023)

Article Chemistry, Multidisciplinary

Tuning heterogeneous ion-radiation damage by composition in NixFe1-x binary single crystals

E. Wyszkowska, C. Mieszczynski, L. Kurpaska, A. Azarov, I. Jozwik, A. Kosinska, W. Chrominski, R. Diduszko, W. Y. Huo, I. Cieslik, J. Jagielski

Summary: Radiation-induced heterogeneous damage is the main cause of failures in nuclear power reactors, but single crystal materials without grain boundaries show promise in overcoming this issue. By fine-tuning the composition, heterogeneous damage in NixFe1-x single crystal alloys can be further overcome.

NANOSCALE (2023)

暂无数据