期刊
APPLIED PHYSICS LETTERS
卷 101, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4768289
关键词
-
资金
- Norwegian Research Council via the FRINAT program
The presence of implanted impurities can affect intrinsic defect annihilation or, in macroscopic terms, so-called lattice recovery, specifically in high dose implantation experiments typically applied to radiation hard materials, e.g., ZnO. Correlating diffusion and lattice recovery data, we demonstrate that F bombardment of ZnO results in a unique situation when implantation induced disorder anneals at anomalously low temperatures, specifically due to the F outdiffusion from the disordered region. Control F+B implants resulted in the suppression of F diffusion and stabilization of the lattice disorder providing the evidence for impurity-limited lattice recovery. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768289]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据