期刊
APPLIED PHYSICS LETTERS
卷 96, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3396987
关键词
annealing; channelling; elemental semiconductors; hydrogen; ion implantation; nucleation; silicon
资金
- Department of Energy, Office of Basic Energy Science
In contradiction to conventional damage annealing, thermally annealed H-implanted Si exhibits an increase in damage or reverse annealing behavior, whose mechanism has remained elusive. In this work, we conclusively elucidate that the reverse annealing effect is due to the nucleation and growth of hydrogen-induced platelets. Platelets are responsible for an increase in the height and width of the channeling damage peak following increased isochronal anneals.
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