Article
Environmental Sciences
Dharman Ranjith Kumar, Kugalur Shanmugam Ranjith, Yuvaraj Haldorai, Asokan Kandasami, Ramasamy Thangavelu Rajendra Kumar
Summary: In this study, it was demonstrated that the visible photocatalytic activities of ZnO nanorod arrays can be enhanced by C ion implantation. The results showed that C ion-implanted ZnO NRAs exhibit increased degradation efficiency under ambient visible light irradiation, indicating an improvement in visible light-driven photocatalytic performance.
Article
Optics
Guoqiang Zhao, Menglin Qiu, Guangfu Wang, Tingshun Wang, Jinfu Zhang
Summary: The luminescence behavior of ZnO crystals irradiated with 2 MeV H+ under different temperatures (300-100 K) was investigated using ion-beam-induced luminescence (IBIL). The results show that temperature and irradiation fluence have different effects on luminous intensity and peak position shift, and the emission bands in different temperature ranges have distinct origins and temperature dependencies.
JOURNAL OF LUMINESCENCE
(2022)
Article
Engineering, Electrical & Electronic
Y. Syryanyy, M. Zajac, E. Guziewicz, W. Wozniak, Y. Melikhov, M. Chernyshova, R. Ratajczak, I. N. Demchenko
Summary: Virgin and Yb-implanted epitaxial ZnO films grown using ALD were investigated by XAS. The polarization dependence of the films determined by the orientation of the polarization vector of the synchrotron radiation to the sample surface was revealed. The implantation and subsequent annealing were found to have an important influence on the native point defect complexes in the ZnO. The presence of donor-acceptor complexes in the samples was confirmed through the comparison of experimental and modelled spectra.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Physics, Applied
P. Dumas, S. Duguay, F. Hilario, A. Gauthier, D. Blavette
Summary: An intriguing uphill diffusion phenomenon related to phosphorus has been observed in carbon co-implanted silicon, resulting in the formation of a steep, highly concentrated, and electrically active dopant peak after the recrystallization of the amorphous layer induced by ion implantation.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Physics, Applied
Razvan Burcea, Hugo Bouteiller, Simon Hurand, Per Eklund, Jean-Francois Barbot, Arnaud le Febvrier
Summary: Noble-gas implantation was used to introduce defects in n-type degenerate ScN thin films to tailor their transport properties. The electrical resistivity increased significantly with the damage levels created, while the electron mobility decreased regardless of the nature of the ion implanted and their doses. However, the transport property characterizations showed that two types of defects were formed during implantation, named point-like and complex-like defects depending on their temperature stability.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Nanoscience & Nanotechnology
Qian Li, Mengdi Zhang, Miaomiao Yuan, Wei Cheng, Bin Liao, Minju Ying
Summary: This study presents a comprehensive experimental and theoretical investigation on the effects of surface polarity on the structure and ferromagnetic properties of Co and Co-Sm co-implanted polar ZnO films. The results show that O-polar ZnO exhibits stronger ferromagnetism, possibly due to the combination of more oxygen vacancies and larger local moments related to Co and Sm doping.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
Jonah R. Adelman, Derek Fujimoto, Martin H. Dehn, Sarah R. Dunsiger, Victoria L. Karner, C. D. Philip Levy, Ruohong Li, Iain McKenzie, Ryan M. L. McFadden, Gerald D. Morris, Matthew R. Pearson, Monika Stachura, Edward Thoeng, John O. Ticknor, Naoki Ohashi, Kenji M. Kojima, W. Andrew MacFarlane
Summary: In this study, we report on the stability and magnetic state of ion implanted Li-8 in single crystals of the semiconductor ZnO using beta-detected nuclear magnetic resonance. Our results show that ionized shallow donor interstitial Li is stable across the entire temperature range and can compensate for the acceptor character of its substitutional counterpart. Above 300 K, correlated local motion of interacting defects was observed, leading to a site change transition from disordered configurations to substitutional. The electric field gradient at the interstitial Li-8 exhibits substantial temperature dependence.
Article
Materials Science, Multidisciplinary
Lilong Pang, Pengfei Tai, Hailong Chang, Minghuan Cui, Tielong Shen, Zhiguang Wang, Kong Fang Wei, Zhiwei Ma, Sihao Huang, Chao Liu, Xing Gao, Yanbin Sheng
Summary: This study investigated the evolution of irradiation defects in Ti3AlC2 samples under Fe ions, He ions, and sequential Fe and He ions irradiation. The results showed that Fe ions irradiation led to stacking faults and twins, while sequential He ions irradiation further evolved the defects induced by Fe ions and decreased the intensity of GIXRD. The findings suggest a significant impact of sequential ion irradiation on the formation of dislocation loops and He bubbles.
JOURNAL OF NUCLEAR MATERIALS
(2022)
Article
Chemistry, Physical
Limin Wan, Chunyang Wu, Ye Yuan, Xinqiang Pan, Yao Shuai, Chuangui Wu, Jun Zhu, Wanli Zhang, Wenbo Luo
Summary: In this study, the chemical reduction method was used to enhance the forming ability and surface blistering efficiency of lithium tantalate crystal during the crystal ion slicing process. The treated black lithium tantalate showed a higher blistering efficiency, confirming the contribution of reduction-induced defects in the implantation and blister formation process. This research provides insights for enhancing the ion slicing efficiency of piezoelectric and pyroelectric single crystal oxide.
APPLIED SURFACE SCIENCE
(2023)
Article
Instruments & Instrumentation
I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovskii, A. G. Korotaev, V. S. Varavin, S. A. Dvoretsky, N. N. Mikhailov, M. Yakushev, O. Fitsych, Z. Swiatek, R. Jakiela
Summary: This study investigated the carrier species in arsenic-implanted Hg0.7Cd0.3Te and Hg0.8Cd0.2Te films grown by molecular-beam epitaxy using Hall-effect studies and mobility spectrum analysis. It was found that arsenic implantation led to different carrier species formation in the two types of films. This difference was attributed to varying background impurity concentrations in films with different chemical compositions.
INFRARED PHYSICS & TECHNOLOGY
(2021)
Article
Materials Science, Multidisciplinary
Lun Qu, Jiaxian Zhao, Jiahui Yang, Yongjie Sun, Changlong Liu
Summary: The Au/SiO2-SiO2 multilayer periodic structure was fabricated by changing the characteristics of the gold nanoparticles at different temperatures, leading to a significant increase in the sample's reflectivity. This method shows promise for application in preparing small but efficient Bragg reflectors.
OPTICAL MATERIALS EXPRESS
(2021)
Article
Materials Science, Multidisciplinary
K. Kamalakkannan, R. Rajaraman, B. Sundaravel, G. Amarendra, K. Sivaji
Summary: Depth-resolved Raman spectroscopy was used to study the changes in sem-insulating 6H-Silicon Carbide (SI:6H-SiC) after Al+ ion implantation and annealing at 800 degrees C. Results showed deformations related to bond breakages and defect recovery, which were observed through the analysis of Raman first-order acoustical and second-order optical phonon modes. Annealing led to symmetrical Raman peaks and the recovery of active Raman modes. The Raman Z-scan studies revealed amorphous features near the surface and partial recovery in the deep region, indicating defect agglomeration and recrystallization.
Article
Chemistry, Physical
Qian Li, Weiqing Yan, Heng Yuan, Shunian Chen, Bin Liao, Minju Ying
Summary: The present study reports room temperature ferromagnetism observed in Co implanted, Er implanted and (Co, Er) co-implanted ZnO films deposited by filtered cathode vacuum arc (FCVA) on sapphire substrates. The electrical properties and magnetic properties of the doped ZnO films were improved, and significant intrinsic ferromagnetism was observed. The results can provide a reference for preparing high-quality diluted magnetic semiconductors (DMSs) by co-doping RE elements and TM elements in ZnO films.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Materials Science, Multidisciplinary
Richa Bhardwaj, Amardeep Bharti, Baljeet Kaur, Manish Kumar, Asokan Kandasami, Keun Hwa Chae, Navdeep Goyal
Summary: The impact of different nickel ion fluence on ZnO films grown on Si(100) substrates via radio frequency sputtering was studied. It was found that with increasing nickel ion fluence, the crystallite size of ZnO films increased, and stress gradients appeared. Additionally, nickel-implanted ZnO/Si(100) films exhibited room temperature ferromagnetism.
Article
Instruments & Instrumentation
S. K. Sharma, P. K. Pujari
Summary: The study focuses on ion implantation of C ions into alpha-alumina crystals, followed by annealing, to investigate defect evolutions at different ion fluences. It is found that at the highest implanted dose, amorphization of damaged region occurs, while samples with lower fluence are recovered on annealing. The formation of open volume defects is observed in samples with higher fluence, confirmed through S-W correlation plots.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
(2021)
Article
Engineering, Mechanical
M. Nowak, K. Mulewska, A. Azarov, L. Kurpaska, A. Ustrzycka
Summary: This study presents a novel peridynamic constitutive relations for predicting plastic deformation and damage evolution in irradiated materials. The plastic behavior of the material, where radiation induced defects contribute to peridynamic porosity, is described by the Gurson-Tvergaard-Needleman (GTN) yield criterion with irradiation hardening. The physical relevance of coupling the porosity with the nonlinear irradiation hardening is discussed, and the expressions for the yield function, kinetics of porosity evolution, irradiation hardening, and plastic flow rule are derived.
INTERNATIONAL JOURNAL OF MECHANICAL SCIENCES
(2023)
Article
Engineering, Electrical & Electronic
Tianxiang Lin, Si-Hua Li, Lok-Ping Ho, Andrej Kuznetsov, Ho Nam Lee, Tony Chau, Francis Chi-Chung Ling
Summary: The fabrication of SiC junction barrier Schottky diodes involves Al ion implantation for p-type doping. By using a new fabrication method, it has been found that low temperature annealing followed by thermal oxidation can solve the trade-off between high Al acceptor activation and low residual concentration of carbon vacancies. This results in the suppression of carbon vacancies and a significant reduction in the reverse leakage current.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Physics, Applied
Alexander Azarov, Augustinas Galeckas, Francis Chi-Chung Ling, Andrej Kuznetsov
Summary: Ion implantation is an effective method for introducing defects into semiconductors. In this study, we investigated the use of crystallographically aligned implants to control the balance between optically active defects in ZnO. Optical data and structural analysis confirmed the formation of different dominant crystalline defects in samples implanted along and off the [0001] direction. The proportions of extended and point defects in the initial as-implanted states of these samples were found to significantly influence the defect-related luminescence upon annealing. We conclude that channeling implants have value in functionalizing defects in semiconductors by tuning specific spectral contents in defect-related emission bands.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Instruments & Instrumentation
T. A. O. Jafer, T. T. Thabethe, O. S. Odutemowo, S. A. Adeojo, H. A. A. Abdelbagi, J. B. Malherbe
Summary: Glassy carbon samples were implanted with ruthenium ions and investigated using XRD, Raman spectroscopy, AFM, and SIMS to study the microstructural changes and diffusion behavior of ruthenium. The results showed that ion implantation caused amorphization and increased tensile stress in the implanted region. Annealing led to recrystallization and a change from tensile to compressive stress. SIMS results indicated the aggregation and segregation of ruthenium atoms at different temperatures, which affected the surface roughness observed by AFM.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
(2023)
Article
Materials Science, Multidisciplinary
Augustinas Galeckas, Robert Karsthof, Kingsly Gana, Angela Kok, Marianne Etzelmueller Bathen, Lasse Vines, Andrej Kuznetsov
Summary: Carrier lifetime control of 150 μm thick 4H-SiC epitaxial layers via thermal generation and annihilation of carbon vacancy (V-C) related Z(1/2) lifetime killer sites is achieved. The defect development during SiC processing steps is monitored using electrical characterization techniques and a novel all-optical approach. The lifetime control is realized by initial high-temperature treatment to increase V-C concentration followed by a moderate-temperature post-annealing. A significant increase in lifetime is observed after the post-annealing, indicating the reduction of V-C-related Z(1/2) sites.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2023)
Article
Nanoscience & Nanotechnology
Jon Borgersen, Robert Karsthof, Vegard Ronning, Lasse Vines, Holger von Wenckstern, Marius Grundmann, Andrej Yu Kuznetsov, Klaus Magnus Johansen
Summary: Significant resistivity variations have been observed in oxides subjected to low ion doses, which cannot be explained by bulk defects. A comparative study of In2O3-based oxides revealed correlations between resistivity evolution, low ion doses, and UV illumination. The resistivity drops were attributed to oxygen desorption facilitated by irradiation/illumination, as confirmed by post-irradiation exposure to oxygen atmosphere.
Article
Physics, Applied
Alexander Azarov, Ji-Hyeon Park, Dae-Woo Jeon, Andrej Kuznetsov
Summary: The migration properties of intrinsic defects in alpha-Ga2O3 were investigated by introducing lattice disorder through ion irradiation and monitoring its evolution with respect to ion dose, flux, and temperature. The results showed a significantly high mobility of intrinsic defects in alpha-Ga2O3, as evidenced by the presence of two distinct disordered regions near the surface and in the bulk, instead of the expected Gaussian shape. Furthermore, the accumulation of disorder was found to be highly sensitive to ion flux and temperature, indicating a dose-rate effect.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
A. Y. Polyakov, A. I. Kochkova, A. Azarov, V. Venkatachalapathy, A. V. Miakonkikh, A. A. Vasilev, A. V. Chernykh, I. V. Shchemerov, A. A. Romanov, A. Kuznetsov, S. J. Pearton
Summary: Ion beam fabrication of metastable polymorphs of Ga2O3, assisted by the controllable accumulation of the disorder in the lattice, is explored for its alternative approach to conventional deposition techniques. In this study, two strategies - ion implantation of silicon donors and plasma treatment with hydrogen - are investigated for tuning the electron concentration in the ion beam created metastable kappa-polymorph. The results show that silicon doping did not change the high resistive state, while hydrogen plasma treatment converted the ion beam fabricated kappa-polymorph to n-type conductivity.
JOURNAL OF APPLIED PHYSICS
(2023)
Editorial Material
Materials Science, Multidisciplinary
Andrej Kuznetsov, Wisanu Pecharapa
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2023)
Review
Chemistry, Physical
Reynald Ponte, Erwan Rauwel, Protima Rauwel
Summary: This review provides an overview of the crystal and electronic structures, bandgap, and defect states of SnO2. It also highlights the significance of defect states on the optical properties of SnO2 and examines the influence of growth methods on its morphology and phase stabilization for thin-film deposition and nanoparticle synthesis. The outlook section discusses the potential of SnO2 as a candidate material for Li-ion batteries, considering its electrochemical properties and sustainability.
Article
Nanoscience & Nanotechnology
Keshav Nagpal, Erwan Rauwel, Frederique Ducroquet, Isabelle Gelard, Protima Rauwel
Summary: We synthesized ZnO nanoparticles and hierarchical nanorod structures using four different alcohols, and the synthesis reactions were controlled by the type of alcohol used. Absolute alcohol allowed for better control and smaller nanoparticles of 5 nm were obtained. The nanorod growth was influenced by the seed layer and the resulting nanorods exhibited persistent photoconductivity under UV irradiation. The physical, chemical, electrical, and optical properties of the ZnO nanostructures were optimized using alcoholic solvents.
Article
Multidisciplinary Sciences
Alexander Azarov, Javier Garcia Fernandez, Junlei Zhao, Flyura Djurabekova, Huan He, Ru He, Oystein Prytz, Lasse Vines, Umutcan Bektas, Paul Chekhonin, Nico Klingner, Gregor Hlawacek, Andrej Kuznetsov
Summary: The γ/β double polymorph Ga2O3 structures demonstrate exceptionally high radiation tolerance, tolerating disorder equivalent to hundreds of displacements per atom. This discovery highlights a new class of radiation tolerant semiconductors.
NATURE COMMUNICATIONS
(2023)
Article
Multidisciplinary Sciences
Rui Zhu, Huili Liang, Shangfeng Liu, Ye Yuan, Xinqiang Wang, Francis Chi-Chung Ling, Andrej Kuznetsov, Guangyu Zhang, Zengxia Mei
Summary: In this study, a new optoelectronic memory based on a photosensitive dielectric (PSD) architecture was proposed. Data writing and erasing were achieved by optical pulse, reducing the programming voltage and optical power density. This discovery provides a brand new direction for low energy consumption non-volatile optoelectronic memories.
NATURE COMMUNICATIONS
(2023)
Article
Chemistry, Multidisciplinary
E. Wyszkowska, C. Mieszczynski, L. Kurpaska, A. Azarov, I. Jozwik, A. Kosinska, W. Chrominski, R. Diduszko, W. Y. Huo, I. Cieslik, J. Jagielski
Summary: Radiation-induced heterogeneous damage is the main cause of failures in nuclear power reactors, but single crystal materials without grain boundaries show promise in overcoming this issue. By fine-tuning the composition, heterogeneous damage in NixFe1-x single crystal alloys can be further overcome.