Article
Materials Science, Multidisciplinary
Z. A. Y. Abdalla, E. G. Njoroge, M. Mlambo, S. V. Motloung, J. B. Malherbe, T. T. Hlatshwayo
Summary: Isothermal annealing studies were conducted on selenium-implanted silicon carbide at temperatures above 1200 degrees Celsius. Different implantation temperatures resulted in various effects, with isothermal annealing facilitating significant recrystallization. The migration behavior of selenium during annealing process showed significant variations.
MATERIALS CHEMISTRY AND PHYSICS
(2022)
Article
Crystallography
Alan G. G. Jacobs, Boris N. N. Feigelson, Joseph A. A. Spencer, Marko J. J. Tadjer, Jennifer K. K. Hite, Karl D. D. Hobart, Travis J. J. Anderson
Summary: Selective area doping is crucial for modern devices. In this study, efficient silicon ion activation in GaN was achieved through symmetrical multicycle rapid thermal annealing. The activation efficiency and mobility improved with increasing annealing temperature. The results demonstrate efficient dopant activation with low unintentional doping, making it suitable for high-voltage, high-power devices. Additionally, high activation and mobility have been achieved with GaN on sapphire, which offers commercial potential due to its large-area and robust substrates.
Article
Engineering, Electrical & Electronic
Zheming Wang, Liguo Zhang, Rongkun Ji, Xiang Kan, Xuan Zhang, Yong Cai, Baoshun Zhang
Summary: Experimental results showed that increasing the implantation temperature had minor influence on the electrical activation of Si impurities in GaN, but led to a decrease in lattice strain. The average electron concentration and mobility remained relatively stable within a certain temperature range.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Chemistry, Physical
Hemin Zhang, Chang Won Ahn, Jin Yong Park, Jung-Woo Ok, Ji Yeong Sung, Jong Sung Jin, Hyun Gyu Kim, Jae Sung Lee
Summary: Hybrid microwave annealing (HMA) is proposed as an alternative postannealing process for recovering the damaged structure of a nitrogen-implanted TiO2 photoanode. Compared to conventional thermal annealing (CTA), HMA provides advantages of transforming interstitial N-N states, preserving ion-implanted nitrogen, and alleviating lattice strain, resulting in improved photocurrent density and IPCE.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2022)
Article
Chemistry, Analytical
Xingshi Yu, Xia Chen, Milan M. Milosevic, Weihong Shen, Rob Topley, Bigeng Chen, Xingzhao Yan, Wei Cao, David J. Thomson, Shinichi Saito, Anna C. Peacock, Otto L. Muskens, Graham T. Reed
Summary: GER amplifier and annealing process can change the optical properties of silicon, enabling flexible testing and post-fabrication trimming of silicon photonics devices, reducing production costs and increasing yield.
Article
Instruments & Instrumentation
S. B. Vishwakarma, S. K. Dubey, R. L. Dubey, I. Sulania, D. Kanjilal
Summary: Investigations have been conducted on the implanted SiO2 thin film after thermal annealing using various analytical techniques. The results revealed the absence of vacancy defects, variations in vibrational modes and the formation of new structures. The photoluminescence intensity of the annealed SiO2 samples was higher, with a decrease in non-radiative defect centers and an increase in radiative Si:SiO2 interface states. Additionally, the presence of silicon nanoclusters formed after annealing resulted in an additional radiative recombination peak. Furthermore, the formation of new SiOx structures was observed after thermal annealing.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
(2024)
Article
Materials Science, Multidisciplinary
Qian Li, Heng Yuan, Mengdi Zhang, Weiqing Yan, Bin Liao, Xu Zhang, Minju Ying
Summary: The annealing effect on Er-implanted ZnO films under different conditions were systematically studied, showing that vacuum annealing significantly enhances the magnetization of the films and is correlated with an increase in oxygen vacancy concentration. The research provides clear evidence of the relationship between the enhancement of ferromagnetism and the increase of oxygen vacancies in Er-doped ZnO.
Article
Chemistry, Physical
Latif U. Khan, Naila Jabeen, Isma Jabbar, Sadaf Jamil, Afia Kanwal, Zareen Akhter, Muhammad Usman, Muhammad Z. Abid, Messaoud Harfouche
Summary: The effects of Ni2+-ion implantation and postannealing in vacuum on the CoO film structure were studied, revealing defects around octahedral Co but conservation of the cubic rock salt structure, making Co1-xNixO a promising candidate for electrocatalysis in fuel cells.
ACS APPLIED ENERGY MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
Hyeonjun Kong, Gowoon Kim, Joonhyuk Lee, Jinhyung Cho, Hyoungjeen Jeen
Summary: The study found that nitrogen can only remain in the lattice of epitaxial iron films at temperatures below 450 degrees Celsius, with significant reduction and lattice modification occurring at 450 degrees Celsius. This leads to increases in saturation magnetization and coercivity, likely due to the reduction of oxygen content at the surface and thinning of Fe2O3.
CURRENT APPLIED PHYSICS
(2021)
Article
Chemistry, Physical
P. Jaroszynski, K. Sierakowski, R. Jakiela, M. Turek, M. Fijalkowski, T. Sochacki, M. Bockowski
Summary: Manganese diffusion in ion implanted gallium nitride crystals was studied. The manganese ions were implanted into a GaN layer grown on an ammonothermal gallium nitride substrate. After implantation, ultra-high pressure annealing was used to both remove the post-implantation damage and induce the diffusion of manganese ions. Two diffusion mechanisms were observed and the diffusion parameters for each mechanism, including activation energy and temperature-independent diffusion coefficients, were determined. The structural quality of the samples was also evaluated using X-ray diffractometry.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Physics, Applied
Koji Kobayashi, Ryosuke Okuyama, Takeshi Kadono, Ayumi Onaka-Masada, Ryo Hirose, Akihiro Suzuki, Yoshihiro Koga, Kazunari Kurita
Summary: In this study, the recrystallization process of discrete amorphous regions formed on a silicon surface implanted with C3H5 molecular ions was investigated. It was found that the recrystallization occurred three-dimensionally, and the activation energy was estimated.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2022)
Article
Instruments & Instrumentation
S. K. Sharma, P. K. Pujari
Summary: The study focuses on ion implantation of C ions into alpha-alumina crystals, followed by annealing, to investigate defect evolutions at different ion fluences. It is found that at the highest implanted dose, amorphization of damaged region occurs, while samples with lower fluence are recovered on annealing. The formation of open volume defects is observed in samples with higher fluence, confirmed through S-W correlation plots.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
(2021)
Article
Chemistry, Physical
Pin-Cheng Lin, Renan Villarreal, Harsh Bana, Zviadi Zarkua, Vince Hendriks, Hung-Chieh Tsai, Manuel Auge, Felix Junge, Hans Hofsaess, Ezequiel Tosi, Paolo Lacovig, Silvano Lizzit, Wenjuan Zhao, Giovanni Di Santo, Luca Petaccia, Steven De Feyter, Stefan De Gendt, Steven Brems, Lino M. C. Pereira
Summary: This study investigates the effects of ultralow-energy ion implantation on graphene, particularly on defect creation and surface contamination, and how they can be minimized through thermal annealing. The research reveals that graphene can be significantly cleaned at relatively low annealing temperatures, but correcting the implantation-induced disorder requires higher annealing temperatures. Furthermore, during high-temperature annealing, the implanted atoms diffuse into the underlying Cu layer, forming a subsurface alloy.
JOURNAL OF PHYSICAL CHEMISTRY C
(2022)
Article
Chemistry, Analytical
Jingmin Wu, Xiang Yang, Fengxuan Wang, Zhiyu Guo, Zhongchao Fan, Zhi He, Fuhua Yang
Summary: The study investigated the ellipsometer-based characterization method for quickly evaluating the depth of damage layer in ion-implanted 4H-SiC, showing it had the advantages of low cost, convenience, and non-destructiveness. The results from optical absorption and CTLM showed that the effective carrier concentration after laser annealing was significantly lower than that after high-temperature annealing.
Article
Physics, Applied
A. Titov, K. Karabeshkin, A. Struchkov, P. A. Karaseov, A. Azarov
Summary: In this study, the high radiation tolerance of GaN was investigated by analyzing the structural disorder using advanced co-irradiation schemes. It was found that the interplay between radiation-stimulated defect annealing and defect stabilization by implanted atoms dominates the bulk defect formation in the crystal. The balance between these two processes depends on the implanted species.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Engineering, Mechanical
M. Nowak, K. Mulewska, A. Azarov, L. Kurpaska, A. Ustrzycka
Summary: This study presents a novel peridynamic constitutive relations for predicting plastic deformation and damage evolution in irradiated materials. The plastic behavior of the material, where radiation induced defects contribute to peridynamic porosity, is described by the Gurson-Tvergaard-Needleman (GTN) yield criterion with irradiation hardening. The physical relevance of coupling the porosity with the nonlinear irradiation hardening is discussed, and the expressions for the yield function, kinetics of porosity evolution, irradiation hardening, and plastic flow rule are derived.
INTERNATIONAL JOURNAL OF MECHANICAL SCIENCES
(2023)
Article
Chemistry, Physical
A. Mackova, A. Jagerova, O. Lalik, R. Miksova, D. Poustka, J. Mistrik, V Holy, J. D. Schutter, U. Kentsch, P. Marvan, A. Azarov, A. Galeckas
Summary: ZnO nanopillars were implanted with Au-400 keV and Ag-252 keV ions at different fluences. The presence of Ag and Au in the ZnO nanopillar layers was confirmed by Rutherford Back-Scattering spectrometry (RBS), which matched well with theoretical calculations. Ion implantation resulted in a reduction in the thickness of the ZnO nanopillar layer. Spectroscopic Ellipsometry (SE) showed a decrease in refractive index in the nanopillar parts with embedded Au and Ag ions. XRD revealed a decrease in vertical domain size due to radiation damage from Au ions. Optical activity in the nanopillars was observed using SE and diffuse reflectance spectroscopy (DRS) in the presence of Au and Ag nanoparticles. PL features linked to ZnO deep level emission were enhanced due to plasmonic interaction with metal nanoparticles created by Ag and Au implantation. Photocatalytic activity was more influenced by the nanoparticles in the layer rather than surface morphology. Dual implantation with Ag and Au ions resulted in enhanced optical activity without significant morphology deterioration compared to solely Au-ion implanted nanopillars.
APPLIED SURFACE SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Tianxiang Lin, Si-Hua Li, Lok-Ping Ho, Andrej Kuznetsov, Ho Nam Lee, Tony Chau, Francis Chi-Chung Ling
Summary: The fabrication of SiC junction barrier Schottky diodes involves Al ion implantation for p-type doping. By using a new fabrication method, it has been found that low temperature annealing followed by thermal oxidation can solve the trade-off between high Al acceptor activation and low residual concentration of carbon vacancies. This results in the suppression of carbon vacancies and a significant reduction in the reverse leakage current.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Physics, Applied
Alexander Azarov, Augustinas Galeckas, Francis Chi-Chung Ling, Andrej Kuznetsov
Summary: Ion implantation is an effective method for introducing defects into semiconductors. In this study, we investigated the use of crystallographically aligned implants to control the balance between optically active defects in ZnO. Optical data and structural analysis confirmed the formation of different dominant crystalline defects in samples implanted along and off the [0001] direction. The proportions of extended and point defects in the initial as-implanted states of these samples were found to significantly influence the defect-related luminescence upon annealing. We conclude that channeling implants have value in functionalizing defects in semiconductors by tuning specific spectral contents in defect-related emission bands.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Instruments & Instrumentation
T. A. O. Jafer, T. T. Thabethe, O. S. Odutemowo, S. A. Adeojo, H. A. A. Abdelbagi, J. B. Malherbe
Summary: Glassy carbon samples were implanted with ruthenium ions and investigated using XRD, Raman spectroscopy, AFM, and SIMS to study the microstructural changes and diffusion behavior of ruthenium. The results showed that ion implantation caused amorphization and increased tensile stress in the implanted region. Annealing led to recrystallization and a change from tensile to compressive stress. SIMS results indicated the aggregation and segregation of ruthenium atoms at different temperatures, which affected the surface roughness observed by AFM.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
(2023)
Article
Materials Science, Multidisciplinary
Augustinas Galeckas, Robert Karsthof, Kingsly Gana, Angela Kok, Marianne Etzelmueller Bathen, Lasse Vines, Andrej Kuznetsov
Summary: Carrier lifetime control of 150 μm thick 4H-SiC epitaxial layers via thermal generation and annihilation of carbon vacancy (V-C) related Z(1/2) lifetime killer sites is achieved. The defect development during SiC processing steps is monitored using electrical characterization techniques and a novel all-optical approach. The lifetime control is realized by initial high-temperature treatment to increase V-C concentration followed by a moderate-temperature post-annealing. A significant increase in lifetime is observed after the post-annealing, indicating the reduction of V-C-related Z(1/2) sites.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2023)
Article
Physics, Applied
A. Y. Polyakov, A. I. Kochkova, A. Azarov, V. Venkatachalapathy, A. V. Miakonkikh, A. A. Vasilev, A. V. Chernykh, I. V. Shchemerov, A. A. Romanov, A. Kuznetsov, S. J. Pearton
Summary: Ion beam fabrication of metastable polymorphs of Ga2O3, assisted by the controllable accumulation of the disorder in the lattice, is explored for its alternative approach to conventional deposition techniques. In this study, two strategies - ion implantation of silicon donors and plasma treatment with hydrogen - are investigated for tuning the electron concentration in the ion beam created metastable kappa-polymorph. The results show that silicon doping did not change the high resistive state, while hydrogen plasma treatment converted the ion beam fabricated kappa-polymorph to n-type conductivity.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Materials Science, Coatings & Films
Alexander Azarov, Vishnukanthan Venkatachalapathy, In-Hwan Lee, Andrej Kuznetsov
Summary: Gallium oxide (Ga2O3) shows complex behavior under ion irradiation, with both functional properties and polymorphic transformations affected by ion-induced disorder. Minimizing lattice disorder can be achieved through postirradiation anneals or through implants at elevated temperatures to prevent disorder accumulation. In this study, both approaches were used to minimize radiation disorder in monoclinic beta-Ga2O3, with implants at 300℃ effectively suppressing defect formation while postirradiation anneals above 900℃ were necessary to achieve similar crystalline quality in samples implanted at room temperature.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2023)
Editorial Material
Materials Science, Multidisciplinary
Andrej Kuznetsov, Wisanu Pecharapa
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2023)
Article
Materials Science, Multidisciplinary
H. Arslan, I. Aulika, A. Sarakovskis, L. Bikse, M. Zubkins, A. Azarov, J. Gabrusenoks, J. Purans
Summary: An investigation was conducted on the spectroscopic and structural characterization of semiconducting yttrium oxide thin film deposited at 623 K (+/- 5K) using reactive pulsed direct current magnetron sputtering. The results indicate the formation of yttrium monoxide (YO) in the transition region between beta-Y2O3 and alpha-Y2O3, accompanied by crystalline Y2O3. The stability of monoxide is limited by the crystal size, leading to distortion in the crystal structure and the arrangement in nano-crystalline/amorphous phase.
Article
Instruments & Instrumentation
Cyprian Mieszczynski, Przemyslaw Jozwik, Kazimierz Skrobas, Kamila Stefanska-Skrobas, Renata Ratajczak, Jacek Jagielski, Frederico Garrido, Edyta Wyszkowska, Alexander Azarov, Katharina Lorenz, Eduardo Alves
Summary: In this work, the unique capability of the new version of the McChasy code (called McChasy2) to simulate experimental energy spectra delivered by Rutherford Backscattering Spectrometry in channeling direction (RBS/C) using large atomic structures (ca. 108 atoms) is presented. The focus is on the simulations of extended structural defects (edge dislocations and loops) formed inside nickel-based single-crystal alloys, which are widely studied and promising materials for high-temperature applications.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
(2023)
Article
Multidisciplinary Sciences
Alexander Azarov, Javier Garcia Fernandez, Junlei Zhao, Flyura Djurabekova, Huan He, Ru He, Oystein Prytz, Lasse Vines, Umutcan Bektas, Paul Chekhonin, Nico Klingner, Gregor Hlawacek, Andrej Kuznetsov
Summary: The γ/β double polymorph Ga2O3 structures demonstrate exceptionally high radiation tolerance, tolerating disorder equivalent to hundreds of displacements per atom. This discovery highlights a new class of radiation tolerant semiconductors.
NATURE COMMUNICATIONS
(2023)
Article
Multidisciplinary Sciences
Rui Zhu, Huili Liang, Shangfeng Liu, Ye Yuan, Xinqiang Wang, Francis Chi-Chung Ling, Andrej Kuznetsov, Guangyu Zhang, Zengxia Mei
Summary: In this study, a new optoelectronic memory based on a photosensitive dielectric (PSD) architecture was proposed. Data writing and erasing were achieved by optical pulse, reducing the programming voltage and optical power density. This discovery provides a brand new direction for low energy consumption non-volatile optoelectronic memories.
NATURE COMMUNICATIONS
(2023)
Article
Chemistry, Multidisciplinary
E. Wyszkowska, C. Mieszczynski, L. Kurpaska, A. Azarov, I. Jozwik, A. Kosinska, W. Chrominski, R. Diduszko, W. Y. Huo, I. Cieslik, J. Jagielski
Summary: Radiation-induced heterogeneous damage is the main cause of failures in nuclear power reactors, but single crystal materials without grain boundaries show promise in overcoming this issue. By fine-tuning the composition, heterogeneous damage in NixFe1-x single crystal alloys can be further overcome.
