Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode

Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure

(2014) Meiyun Zhang et al.   APPLIED PHYSICS LETTERS

Al-doped ZnO as a switching layer for transparent bipolar resistive switching memory

(2014) Hyeongwoo Yu et al.   Electronic Materials Letters

Study on the formation of zinc peroxide on zinc oxide with hydrogen peroxide treatment using x-ray photoelectron spectroscopy (XPS)

(2014) Hsin-Yen Lee et al.   Electronic Materials Letters

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Top electrode-dependent resistance switching behaviors of lanthanum-doped ZnO film memory devices

(2013) Dinglin Xu et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

(2013) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications

(2013) Debashis Panda et al.   JOURNAL OF MATERIALS SCIENCE

Fully Transparent Resistive Memory Employing Graphene Electrodes for Eliminating Undesired Surface Effects

(2013) Po-Kang Yang et al.   PROCEEDINGS OF THE IEEE

On conditions leading to crossing of I–V curve in metal1|mixed-ionic–electronic-conductor|metal2 devices

(2013) Dima Kalaev et al.   SOLID STATE IONICS

Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

(2012) Shuang Gao et al.   Journal of Physical Chemistry C

Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices

(2012) I-Chuan Yao et al.   NANOTECHNOLOGY

All Solution-Processed, Fully Transparent Resistive Memory Devices

(2011) Areum Kim et al.   ACS Applied Materials & Interfaces

An Indium-Free Transparent Resistive Switching Random Access Memory

(2011) K. Zheng et al.   IEEE ELECTRON DEVICE LETTERS

Flexible resistive switching memory based on Mn0.20Zn0.80O/HfO2bilayer structure

(2011) Hai Zhou et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature

(2011) Xun Cao et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Role of Interface Reaction on Resistive Switching of Metal/Amorphous TiO2/Al RRAM Devices

(2011) Hu Young Jeong et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Top electrode-dependent resistance switching behaviors of ZnO thin films deposited on Pt/Ti/SiO2/Si substrate

(2011) Ming Hua Tang et al.   MICROELECTRONIC ENGINEERING

Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms

(2010) H. Y. Peng et al.   APPLIED PHYSICS LETTERS

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

(2010) Min-Chen Chen et al.   APPLIED PHYSICS LETTERS

Dependence of aluminum-doped zinc oxide work function on surface cleaning method as studied by ultraviolet and X-ray photoelectron spectroscopies

(2010) Weiyan Wang et al.   APPLIED SURFACE SCIENCE

Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory

(2010) Min-Chen Chen et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Room temperature deposition of Al-doped ZnO thin films on glass by RF magnetron sputtering under different Ar gas pressure

(2010) Deok Kyu Kim et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

The effect of plasma deposition on the electrical characteristics of Pt/HfOx/TiN RRAM device

(2010) Kou-Chen Liu et al.   SURFACE & COATINGS TECHNOLOGY

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Bipolar Resistance Switching in Fully Transparent ZnO:Mg-Based Devices

(2009) Lei Shi et al.   Applied Physics Express

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

(2008) Wen-Yuan Chang et al.   APPLIED PHYSICS LETTERS

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

(2008) Jung Won Seo et al.   APPLIED PHYSICS LETTERS