Novel synaptic memory device for neuromorphic computing

Effects of Mg-Doping on ${\rm HfO}_{2}$-Based ReRAM Device Switching Characteristics

(2013) Branden Michael Long et al.   IEEE ELECTRON DEVICE LETTERS

Specifications of Nanoscale Devices and Circuits for Neuromorphic Computational Systems

(2012) Bipin Rajendran et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Towards artificial neurons and synapses: a materials point of view

(2012) Doo Seok Jeong et al.   RSC Advances

Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor

(2011) Ting Chang et al.   ACS Nano

Point Defects in Oxides: Tailoring Materials Through Defect Engineering

(2011) Harry L. Tuller et al.   Annual Review of Materials Research

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

The future of microprocessors

(2011) Shekhar Borkar et al.   COMMUNICATIONS OF THE ACM

Cognitive computing

(2011) Dharmendra S. Modha et al.   COMMUNICATIONS OF THE ACM

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing

(2011) Duygu Kuzum et al.   NANO LETTERS

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

(2010) Sung Hyun Jo et al.   NANO LETTERS

Correlation of Charge Buildup and Stress-Induced Leakage Current in Cerium Oxide Films Grown on Ge (100) Substrates

(2009) Evangelos K. Evangelou et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES