Role of oxygen vacancies on the bias illumination stress stability of solution-processed zinc tin oxide thin film transistors

Title
Role of oxygen vacancies on the bias illumination stress stability of solution-processed zinc tin oxide thin film transistors
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 2, Pages 023509
Publisher
AIP Publishing
Online
2014-07-18
DOI
10.1063/1.4890579

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