Role of oxygen vacancies on the bias illumination stress stability of solution-processed zinc tin oxide thin film transistors
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Title
Role of oxygen vacancies on the bias illumination stress stability of solution-processed zinc tin oxide thin film transistors
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 2, Pages 023509
Publisher
AIP Publishing
Online
2014-07-18
DOI
10.1063/1.4890579
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Note: Only part of the references are listed.- Impact of Soft Annealing on the Performance of Solution-Processed Amorphous Zinc Tin Oxide Thin-Film Transistors
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- Defect reduction in photon-accelerated negative bias instability of InGaZnO thin-film transistors by high-pressure water vapor annealing
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- Photo stability of solution-processed low-voltage high mobility zinc-tin-oxide/ZrO2 thin-film transistors for transparent display applications
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- Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc-oxide thin-film transistors from negative bias under illumination stress
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- Low-Temperature, Solution-Processed Zinc Tin Oxide Thin-Film Transistors Fabricated by Thermal Annealing and Microwave Irradiation
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- Fringe Field Effect on Electrical Characteristics of Pentacene Thin-Film Transistors
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- Effects of O2plasma treatment on low temperature solution-processed zinc tin oxide thin film transistors
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- Variation of Oxygen Deficiency in Solution-Processed Ultra-Thin Zinc-Tin Oxide Films to Their Transistor Characteristics
- (2013) Li-Chih Liu et al. ECS Journal of Solid State Science and Technology
- Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
- (2012) E. Fortunato et al. ADVANCED MATERIALS
- Role of Adsorbed H$_{2}$O on Transfer Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors
- (2012) DooHyun Kim et al. Applied Physics Express
- Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors
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- Carrier-Suppressing Effect of Mg in Solution-Processed Zn-Sn-O Thin-Film Transistors
- (2012) Hyun Soo Lim et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Solution-Processed Zinc Oxide Thin-Film Transistors With a Low-Temperature Polymer Passivation Layer
- (2012) Xiaoli Xu et al. IEEE ELECTRON DEVICE LETTERS
- Improvement of the photo-bias stability of the Zn–Sn–O field effect transistors by an ozone treatment
- (2012) Bong Seob Yang et al. JOURNAL OF MATERIALS CHEMISTRY
- Effects of Ambient Atmosphere on Electrical Characteristics of Al2O3 Passivated InGaZnO Thin Film Transistors during Positive-Bias-Temperature-Stress Operation
- (2011) Sheng-Yao Huang et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Effect of Zinc/Tin Composition Ratio on the Operational Stability of Solution-Processed Zinc–Tin–Oxide Thin-Film Transistors
- (2011) Yong-Hoon Kim et al. IEEE ELECTRON DEVICE LETTERS
- Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing
- (2011) Myung-Gil Kim et al. NATURE MATERIALS
- Unusual enhancement in electrical conductivity of tin oxide thin films with zinc doping
- (2011) Yinzhu Jiang et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer
- (2010) Shinhyuk Yang et al. APPLIED PHYSICS LETTERS
- Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor
- (2010) Himchan Oh et al. APPLIED PHYSICS LETTERS
- Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors
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- Postannealing Process for Low Temperature Processed Sol–Gel Zinc Tin Oxide Thin Film Transistors
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- Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors
- (2010) John F. Conley IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
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