Postannealing Process for Low Temperature Processed Sol–Gel Zinc Tin Oxide Thin Film Transistors

Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors

(2009) Sunho Jeong et al.   ADVANCED MATERIALS

Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

(2009) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

High performance thin film transistor with cosputtered amorphous Zn–In–Sn–O channel: Combinatorial approach

(2009) Min Ki Ryu et al.   APPLIED PHYSICS LETTERS

Solution-Processed, High Performance Aluminum Indium Oxide Thin-Film Transistors Fabricated at Low Temperature

(2009) Young Hwan Hwang et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

High performance solution-processed amorphous zinc tin oxide thin film transistor

(2009) Seok-Jun Seo et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Inkjet-Printed Zinc Tin Oxide Thin-Film Transistor

(2009) Dongjo Kim et al.   LANGMUIR

Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Origin of Subthreshold Swing Improvement in Amorphous Indium Gallium Zinc Oxide Transistors

(2008) Jong Han Jeong et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Factors controlling electron transport properties in transparent amorphous oxide semiconductors

(2008) Hideo Hosono et al.   JOURNAL OF NON-CRYSTALLINE SOLIDS

Aqueous Inorganic Inks for Low-Temperature Fabrication of ZnO TFTs

(2008) Stephen T. Meyers et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY