High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells
出版年份 2014 全文链接
标题
High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 104, Issue 9, Pages 091111
出版商
AIP Publishing
发表日期
2014-03-05
DOI
10.1063/1.4867023
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Suppression of Auger-stimulated efficiency droop in nitride-based light emitting diodes
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- Inverted Octagonal Surface Defects in a-Plane AlGaN/GaN Multiple Quantum Wells
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- Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
- (2011) Hongping Zhao et al. OPTICS EXPRESS
- Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes
- (2010) Shih-Chun Ling et al. APPLIED PHYSICS LETTERS
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- Low Droop Nonpolar GaN/InGaN Light Emitting Diode Grown on m-Plane GaN Substrate
- (2010) Shih-Pang Chang et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN
- (2009) X. Ni et al. APPLIED PHYSICS LETTERS
- Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
- (2009) Hongping Zhao et al. APPLIED PHYSICS LETTERS
- Measurement of electron overflow in 450 nm InGaN light-emitting diode structures
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- Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes
- (2008) J. P. Liu et al. APPLIED PHYSICS LETTERS
- Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
- (2008) Martin F. Schubert et al. APPLIED PHYSICS LETTERS
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