Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN

m-Plane GaInN Light Emitting Diodes Grown on Patterneda-Plane Sapphire Substrates

(2009) Yoshiki Saito et al.   Applied Physics Express

m-Plane GaN Films Grown on Patterneda-Plane Sapphire Substrates with 3-inch Diameter

(2009) Koji Okuno et al.   Applied Physics Express

Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

(2009) Q. Dai et al.   APPLIED PHYSICS LETTERS

Mg segregation in a (11¯01) GaN grown on a 7° off-axis (001) Si substrate by MOVPE

(2009) Kazuyoshi Tomita et al.   JOURNAL OF CRYSTAL GROWTH

Growth and properties of semi-polar GaN on a patterned silicon substrate

(2009) Nobuhiko Sawaki et al.   JOURNAL OF CRYSTAL GROWTH

Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

(2008) Xianfeng Ni et al.   APPLIED PHYSICS LETTERS

Growth of non-polar (112¯0)GaN on a patterned (110)Si substrate by selective MOVPE

(2008) T. Tanikawa et al.   JOURNAL OF CRYSTAL GROWTH