Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory
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Title
Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 8, Pages 082908
Publisher
AIP Publishing
Online
2014-02-27
DOI
10.1063/1.4866860
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Related references
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- Electrode effects on the conduction mechanisms in HfO2-based metal-insulator-metal capacitors
- (2009) F. El Kamel et al. JOURNAL OF APPLIED PHYSICS
- Composition influence on the physical and electrical properties of SrxTi1−xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes
- (2009) N. Menou et al. JOURNAL OF APPLIED PHYSICS
- Atomic Layer Deposition of Strontium Titanate Films Using Sr([sup t]Bu[sub 3]Cp)[sub 2] and Ti(OMe)[sub 4]
- (2009) M. Popovici et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Epitaxial growth of high-κ TiO[sub 2] rutile films on RuO[sub 2] electrodes
- (2009) K. Fröhlich et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors
- (2008) Seong Keun Kim et al. ADVANCED MATERIALS
- Enhanced electrical properties of SrTiO3 thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications
- (2008) Sang Woon Lee et al. APPLIED PHYSICS LETTERS
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