Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

Published 2008 View Full Article

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Title
Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors
Authors
Keywords
-
Journal
ADVANCED MATERIALS
Volume 20, Issue 8, Pages 1429-1435
Publisher
Wiley
Online
2008-03-20
DOI
10.1002/adma.200701085

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