N-Polar InAlN/AlN/GaN MIS-HEMTs

Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition

(2010) David F. Brown et al.   JOURNAL OF APPLIED PHYSICS

High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation

(2009) Man Hoi Wong et al.   APPLIED PHYSICS LETTERS

Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition

(2009) David F. Brown et al.   APPLIED PHYSICS LETTERS

RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate

(2009) S. Kolluri et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance N-Face GaN Microwave MIS-HEMTs With > 70% Power-Added Efficiency

(2009) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier

(2008) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

(2008) Jungwoo Joh et al.   IEEE ELECTRON DEVICE LETTERS

Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

(2008) S. Keller et al.   JOURNAL OF APPLIED PHYSICS