Indium incorporation dynamics into AIInN ternary alloys for laser structures lattice matched to GaN

Al1-xInxN ternary alloys with solid phase indium compositions between x=0.15 and 0.28 have been grown by metal organic chemical vapor deposition under indium rich conditions within the growth temperature range of 750-810 degrees C. A thermally activated process with activation energy of 1.05 +/- 0.05 eV is found to compete with indium incorporation. Smooth epitaxial layers with root mean-squares surface roughness of 0.3-0.8 nm are obtained. (Al,In)N films lattice matched to GaN have been introduced into laser diode structures for optical confinement. Optical gain is observed. (C) 2008 American Institute of Physics.