Device performance and bias instability of Ta doped InZnO thin film transistor as a function of process pressure
出版年份 2013 全文链接
标题
Device performance and bias instability of Ta doped InZnO thin film transistor as a function of process pressure
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 102, Issue 10, Pages 102102
出版商
AIP Publishing
发表日期
2013-03-12
DOI
10.1063/1.4794941
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