Effects of Mg on the electrical characteristics and thermal stability of MgxZn1−xO thin film transistors

Effect of Zr addition on ZnSnO thin-film transistors using a solution process

(2010) You Seung Rim et al.   APPLIED PHYSICS LETTERS

Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

(2010) Chih-Tsung Tsai et al.   APPLIED PHYSICS LETTERS

Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors

(2010) Gun Hee Kim et al.   APPLIED PHYSICS LETTERS

Insight on the SU-8 resist as passivation layer for transparent Ga2O3–In2O3–ZnO thin-film transistors

(2010) Antonis Olziersky et al.   JOURNAL OF APPLIED PHYSICS

Temperature-Dependent Transfer Characteristics of Amorphous InGaZnO4Thin-Film Transistors

(2009) Kazushige Takechi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Reduction in charged defects associated with oxygen vacancies in hafnia by magnesium incorporation: First-principles study

(2008) Naoto Umezawa et al.   APPLIED PHYSICS LETTERS