Origin of Subthreshold Swing Improvement in Amorphous Indium Gallium Zinc Oxide Transistors

Published 2008 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Origin of Subthreshold Swing Improvement in Amorphous Indium Gallium Zinc Oxide Transistors
Authors
Keywords
-
Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 11, Issue 6, Pages H157
Publisher
The Electrochemical Society
Online
2008-04-18
DOI
10.1149/1.2903209

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.