Impact of Ti doping in Sm2O3 dielectric on electrical characteristics of a-InGaZnO thin-film transistors
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Title
Impact of Ti doping in Sm2O3 dielectric on electrical characteristics of a-InGaZnO thin-film transistors
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 19, Pages 193515
Publisher
AIP Publishing
Online
2013-05-18
DOI
10.1063/1.4807014
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- (2008) H. Yang et al. APPLIED PHYSICS LETTERS
- Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
- (2008) Jae Kyeong Jeong et al. APPLIED PHYSICS LETTERS
- Effect of Annealing on the Structural and Electrical Properties of High-k Sm[sub 2]O[sub 3] Dielectrics
- (2008) Tung-Ming Pan et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- High-Performance Poly-Si TFTs With $\hbox{Pr}_{2} \hbox{O}_{3}$ Gate Dielectric
- (2008) Chia-Wen Chang et al. IEEE ELECTRON DEVICE LETTERS
- Thermal Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors
- (2008) Mami Fujii et al. JAPANESE JOURNAL OF APPLIED PHYSICS
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