Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

Impact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN/GaN HEMTs

(2012) Feng Gao et al.   IEEE ELECTRON DEVICE LETTERS

AC Transconductance Dispersion (ACGD): A Method to Profile Oxide Traps in MOSFETs Without Body Contact

(2012) Xiao Sun et al.   IEEE ELECTRON DEVICE LETTERS

High-Temperature Performance of AlGaN/GaN MOSHEMT With $\hbox{SiO}_{2}$ Gate Insulator Fabricated on Si (111) Substrate

(2012) Fatima Husna et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A High-Frequency Transconductance Method for Characterization of High- $\kappa$ Border Traps in III-V MOSFETs

(2012) Sofia Johansson et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

(2011) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped $\hbox{TiO}_{2}$ as a Gate Dielectric

(2011) Chih-Chun Hu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effects of Short-Term DC-Bias-Induced Stress on n-GaN/AlGaN/GaN MOSHEMTs With Liquid-Phase-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as a Gate Dielectric

(2010) Sarbani Basu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

(2009) O.I. Saadat et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using Oxide Insulator Grown by Photoelectrochemical Oxidation Method

(2008) Li-Hsien Huang et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

(2008) Yuanzheng Yue et al.   IEEE ELECTRON DEVICE LETTERS