Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition

Published 2010 View Full Article

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Title
Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 49, Issue 8, Pages 080201
Publisher
Japan Society of Applied Physics
Online
2010-08-05
DOI
10.1143/jjap.49.080201

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