Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O3/SiNx gate dielectrics

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

(2008) Jae Kyeong Jeong et al.   APPLIED PHYSICS LETTERS

High-performance InGaZnO thin-film transistors with high-k amorphous Ba0.5Sr0.5TiO3 gate insulator

(2008) J. B. Kim et al.   APPLIED PHYSICS LETTERS

High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes

(2008) Jong H. Na et al.   APPLIED PHYSICS LETTERS

Low voltage operating InGaZnO4 thin film transistors using high-k MgO–Ba0.6Sr0.4TiO3 composite gate dielectric on plastic substrate

(2008) Dong Hun Kim et al.   APPLIED PHYSICS LETTERS

Stable ZnO thin film transistors by fast open air atomic layer deposition

(2008) David H. Levy et al.   APPLIED PHYSICS LETTERS

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

(2008) A. Suresh et al.   APPLIED PHYSICS LETTERS

Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

(2008) Jang Yeon Kwon et al.   IEEE ELECTRON DEVICE LETTERS

Gallium–Indium–Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material

(2008) Pedro Barquinha et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES